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Title: PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor

Abstract

The study of ZrO{sub 2} thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO{sub 2} thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO{sub 2} thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°Ð¡. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.

Authors:
; ; ; ;  [1]
  1. North Maharashtra University, Department of Electronics, School of Physical Sciences (India)
Publication Date:
OSTI Identifier:
22649618
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 1; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL COMPOSITION; DEPOSITION; ELLIPSOMETERS; LAYERS; PHOTOELECTRON SPECTROSCOPY; ROUGHNESS; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDES; SUBSTRATES; SURFACES; THIN FILMS; ZIRCONIUM OXIDES

Citation Formats

Khairnar, A. G., E-mail: agkhairnar@gmail.com, Patil, V. S., Agrawal, K. S., Salunke, R. S., and Mahajan, A. M., E-mail: ammahajan@nmu.ac.in. PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor. United States: N. p., 2017. Web. doi:10.1134/S1063782617010092.
Khairnar, A. G., E-mail: agkhairnar@gmail.com, Patil, V. S., Agrawal, K. S., Salunke, R. S., & Mahajan, A. M., E-mail: ammahajan@nmu.ac.in. PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor. United States. doi:10.1134/S1063782617010092.
Khairnar, A. G., E-mail: agkhairnar@gmail.com, Patil, V. S., Agrawal, K. S., Salunke, R. S., and Mahajan, A. M., E-mail: ammahajan@nmu.ac.in. Sun . "PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor". United States. doi:10.1134/S1063782617010092.
@article{osti_22649618,
title = {PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor},
author = {Khairnar, A. G., E-mail: agkhairnar@gmail.com and Patil, V. S. and Agrawal, K. S. and Salunke, R. S. and Mahajan, A. M., E-mail: ammahajan@nmu.ac.in},
abstractNote = {The study of ZrO{sub 2} thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO{sub 2} thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO{sub 2} thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°Ð¡. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.},
doi = {10.1134/S1063782617010092},
journal = {Semiconductors},
number = 1,
volume = 51,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2017},
month = {Sun Jan 15 00:00:00 EST 2017}
}
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