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Title: Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers

Abstract

The electrical characteristics of epitaxial layers of n-4H-SiC (CVD) irradiated with 0.9 and 3.5MeV electrons are studied. It is shown that the donor removal rate becomes nearly four times higher as the energy of impinging electrons increases by a factor of 4, although the formation cross section of primary radiation defects (Frenkel pairs in the carbon sublattice) responsible for conductivity compensation of the material is almost energy independent in this range. It is assumed that the reason for the observed differences is the influence exerted by primary knocked-out atoms. First, cascade processes start to manifest themselves with increasing energy of primary knocked-out atoms. Second, the average distance between genetically related Frenkel pairs grows, and, as a consequence, the fraction of defects that do not recombine under irradiation becomes larger. The recombination radius of Frenkel pairs in the carbon sublattice is estimated and the possible charge state of the recombining components is assessed.

Authors:
 [1]; ; ;  [2];  [1];  [3]
  1. Peter the Great St. Petersburg State Polytechnic University (Russian Federation)
  2. Ioffe Physical–Technical Institute (Russian Federation)
  3. Belarusian State University (Belarus)
Publication Date:
OSTI Identifier:
22649613
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 3; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON; CHARGE STATES; CHEMICAL VAPOR DEPOSITION; CROSS SECTIONS; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ELECTRONS; ENERGY DEPENDENCE; EPITAXY; IRRADIATION; LAYERS; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; RECOMBINATION; SILICON CARBIDES

Citation Formats

Kozlovski, V. V., E-mail: kozlovski@physics.spbstu.ru, Lebedev, A. A., Strel’chuk, A. M., Davidovskaya, K. S., Vasil’ev, A. E., and Makarenko, L. F. Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers. United States: N. p., 2017. Web. doi:10.1134/S1063782617030137.
Kozlovski, V. V., E-mail: kozlovski@physics.spbstu.ru, Lebedev, A. A., Strel’chuk, A. M., Davidovskaya, K. S., Vasil’ev, A. E., & Makarenko, L. F. Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers. United States. doi:10.1134/S1063782617030137.
Kozlovski, V. V., E-mail: kozlovski@physics.spbstu.ru, Lebedev, A. A., Strel’chuk, A. M., Davidovskaya, K. S., Vasil’ev, A. E., and Makarenko, L. F. Wed . "Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers". United States. doi:10.1134/S1063782617030137.
@article{osti_22649613,
title = {Effect of the energy of bombarding electrons on the conductivity of n-4H-SiC (CVD) epitaxial layers},
author = {Kozlovski, V. V., E-mail: kozlovski@physics.spbstu.ru and Lebedev, A. A. and Strel’chuk, A. M. and Davidovskaya, K. S. and Vasil’ev, A. E. and Makarenko, L. F.},
abstractNote = {The electrical characteristics of epitaxial layers of n-4H-SiC (CVD) irradiated with 0.9 and 3.5MeV electrons are studied. It is shown that the donor removal rate becomes nearly four times higher as the energy of impinging electrons increases by a factor of 4, although the formation cross section of primary radiation defects (Frenkel pairs in the carbon sublattice) responsible for conductivity compensation of the material is almost energy independent in this range. It is assumed that the reason for the observed differences is the influence exerted by primary knocked-out atoms. First, cascade processes start to manifest themselves with increasing energy of primary knocked-out atoms. Second, the average distance between genetically related Frenkel pairs grows, and, as a consequence, the fraction of defects that do not recombine under irradiation becomes larger. The recombination radius of Frenkel pairs in the carbon sublattice is estimated and the possible charge state of the recombining components is assessed.},
doi = {10.1134/S1063782617030137},
journal = {Semiconductors},
number = 3,
volume = 51,
place = {United States},
year = {Wed Mar 15 00:00:00 EDT 2017},
month = {Wed Mar 15 00:00:00 EDT 2017}
}