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Title: Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

Abstract

The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

Authors:
 [1];  [2];  [3]; ;  [1];  [2]; ;  [3]; ;  [1]
  1. Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
  2. National Research Nuclear University “MEPhI” (Russian Federation)
  3. Moscow State University, Faculty of Physics (Russian Federation)
Publication Date:
OSTI Identifier:
22649611
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 3; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; ATOMIC FORCE MICROSCOPY; EMISSION SPECTRA; EMISSION SPECTROSCOPY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LAYERS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SUBSTRATES; TEMPERATURE DEPENDENCE; THIN FILMS; THZ RANGE; TIME RESOLUTION; WAVE FORMS; X-RAY DIFFRACTION

Citation Formats

Galiev, G. B., E-mail: galiev-galib@mail.ru, Grekhov, M. M., Kitaeva, G. Kh., Klimov, E. A., Klochkov, A. N., Kolentsova, O. S., Kornienko, V. V., Kuznetsov, K. A., Maltsev, P. P., and Pushkarev, S. S.. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates. United States: N. p., 2017. Web. doi:10.1134/S1063782617030071.
Galiev, G. B., E-mail: galiev-galib@mail.ru, Grekhov, M. M., Kitaeva, G. Kh., Klimov, E. A., Klochkov, A. N., Kolentsova, O. S., Kornienko, V. V., Kuznetsov, K. A., Maltsev, P. P., & Pushkarev, S. S.. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates. United States. doi:10.1134/S1063782617030071.
Galiev, G. B., E-mail: galiev-galib@mail.ru, Grekhov, M. M., Kitaeva, G. Kh., Klimov, E. A., Klochkov, A. N., Kolentsova, O. S., Kornienko, V. V., Kuznetsov, K. A., Maltsev, P. P., and Pushkarev, S. S.. Wed . "Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates". United States. doi:10.1134/S1063782617030071.
@article{osti_22649611,
title = {Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates},
author = {Galiev, G. B., E-mail: galiev-galib@mail.ru and Grekhov, M. M. and Kitaeva, G. Kh. and Klimov, E. A. and Klochkov, A. N. and Kolentsova, O. S. and Kornienko, V. V. and Kuznetsov, K. A. and Maltsev, P. P. and Pushkarev, S. S.},
abstractNote = {The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.},
doi = {10.1134/S1063782617030071},
journal = {Semiconductors},
number = 3,
volume = 51,
place = {United States},
year = {Wed Mar 15 00:00:00 EDT 2017},
month = {Wed Mar 15 00:00:00 EDT 2017}
}