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Title: Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO{sub x}/insulator structures from the results of synchrotron investigations

Abstract

The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic a-SiO{sub x}/SiO{sub 2}, a-SiO{sub x}/Al{sub 2}O{sub 3}, and a-SiO{sub x}/ZrO{sub 2} compounds. Using synchrotron radiation and the X-ray absorption near edge structure (XANES) spectroscopy technique, a modification is revealed for the investigated structures under the effect of high-temperature annealing at the highest temperature of 1100°C; this modification is attributed to the formation of silicon nanocrystals in the layers of photoluminescent multilayer structures.

Authors:
; ;  [1]; ;  [2]; ;  [1]; ;  [2];  [1]
  1. Voronezh State University (Russian Federation)
  2. Lobachevsky State University of Nizhny Novgorod (Russian Federation)
Publication Date:
OSTI Identifier:
22649606
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 3; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION SPECTROSCOPY; ANNEALING; EFFICIENCY; ELECTRONIC STRUCTURE; LAYERS; NANOPARTICLES; NANOSTRUCTURES; PHOTOLUMINESCENCE; SILICON; SILICON OXIDES; SYNCHROTRON RADIATION; TEMPERATURE RANGE 0400-1000 K; X-RAY SPECTROSCOPY; ZIRCONIUM OXIDES

Citation Formats

Turishchev, S. Yu., E-mail: tsu@phys.vsu.ru, Terekhov, V. A., Koyuda, D. A., Ershov, A. V., Mashin, A. I., Parinova, E. V., Nesterov, D. N., Grachev, D. A., Karabanova, I. A., and Domashevskaya, E. P. Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO{sub x}/insulator structures from the results of synchrotron investigations. United States: N. p., 2017. Web. doi:10.1134/S1063782617030241.
Turishchev, S. Yu., E-mail: tsu@phys.vsu.ru, Terekhov, V. A., Koyuda, D. A., Ershov, A. V., Mashin, A. I., Parinova, E. V., Nesterov, D. N., Grachev, D. A., Karabanova, I. A., & Domashevskaya, E. P. Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO{sub x}/insulator structures from the results of synchrotron investigations. United States. doi:10.1134/S1063782617030241.
Turishchev, S. Yu., E-mail: tsu@phys.vsu.ru, Terekhov, V. A., Koyuda, D. A., Ershov, A. V., Mashin, A. I., Parinova, E. V., Nesterov, D. N., Grachev, D. A., Karabanova, I. A., and Domashevskaya, E. P. Wed . "Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO{sub x}/insulator structures from the results of synchrotron investigations". United States. doi:10.1134/S1063782617030241.
@article{osti_22649606,
title = {Formation of silicon nanocrystals in multilayer nanoperiodic a-SiO{sub x}/insulator structures from the results of synchrotron investigations},
author = {Turishchev, S. Yu., E-mail: tsu@phys.vsu.ru and Terekhov, V. A. and Koyuda, D. A. and Ershov, A. V. and Mashin, A. I. and Parinova, E. V. and Nesterov, D. N. and Grachev, D. A. and Karabanova, I. A. and Domashevskaya, E. P.},
abstractNote = {The problem of the efficiency of the controllable formation of arrays of silicon nanoparticles is studied on the basis of detailed investigations of the electronic structure of multilayer nanoperiodic a-SiO{sub x}/SiO{sub 2}, a-SiO{sub x}/Al{sub 2}O{sub 3}, and a-SiO{sub x}/ZrO{sub 2} compounds. Using synchrotron radiation and the X-ray absorption near edge structure (XANES) spectroscopy technique, a modification is revealed for the investigated structures under the effect of high-temperature annealing at the highest temperature of 1100°C; this modification is attributed to the formation of silicon nanocrystals in the layers of photoluminescent multilayer structures.},
doi = {10.1134/S1063782617030241},
journal = {Semiconductors},
number = 3,
volume = 51,
place = {United States},
year = {Wed Mar 15 00:00:00 EDT 2017},
month = {Wed Mar 15 00:00:00 EDT 2017}
}
  • The results of X-ray absorption near-edge structure spectroscopy data obtained with synchrotron radiation for multilayered nanoperiodic Al{sub 2}O{sub 3}/SiO{sub x}/Al{sub 2}O{sub 3}/SiO{sub x}/.../Si(100) structures annealed at temperatures of 500–1100°C are reported. The data show that, upon high-temperature annealing (∼1100°C), the structures are modified. The modification is attributed to the formation of Si nanocrystals in deep layers of the structures. At the same time, the structures exhibit size-dependent high-intensity photoluminescence in the photon-energy range 1.4–1.52 eV.
  • Al{sub 2}O{sub 3}/SiO{sub x}/Al{sub 2}O{sub 3}/SiO{sub x}/ Horizontal-Ellipsis /Si(100) multilayer nanoperiodic structures (MNS) are studied by X-ray absorption near-edge structure spectroscopy (XANES). Experimental XANES spectroscopy spectra are obtained using synchrotron radiation. The formation of Si nanoclusters in the surface layers of the structures during their high-temperature annealing is observed. The structures featured intense size-dependent photoluminescence in the wavelength region near 800 nm. At the same time, it is shown that the formation of aluminum silicates is possible. The inversion effect of the intensity of the XANES spectra during the interaction of synchrotron radiation with MNSs is revealed.
  • The alternate vacuum evaporation of SiO and SiO{sub 2} from separate sources is used to produce amorphous a-SiO{sub x}/SiO{sub 2} multilayer nanoperiodic structures with periods of 5-10 nm and a number of layers of up to 64. The effect of annealing at temperatures T{sub a} = 500-1100 Degree-Sign C on the structural and optical properties of the nanostructures is studied. The results of transmission electron microscopy of the samples annealed at 1100 Degree-Sign C indicate the annealing-induced formation of vertically ordered quasiperiodic arrays of Si nanocrystals, whose dimensions are comparable to the a-SiO{sub x}-layer thickness in the initial nanostructures. Themore » nanostructures annealed at 1100 Degree-Sign C exhibit size-dependent photoluminescence in the wavelength range 750-830 nm corresponding to Si nanocrystals. The data on infrared absorption and Raman scattering show that the thermal evolution of structural and phase state of the SiO{sub x} layers with increasing annealing temperature proceeds through the formation of amorphous Si nanoinclusions with the subsequent formation and growth of Si nanocrystals.« less
  • The photoluminescence, infrared absorption, and Raman spectra of amorphous multilayered nanoperiodic a-SiO{sub x}/ZrO{sub 2} structures produced by vacuum evaporation and then annealed at different temperatures (500-1100 Degree-Sign C) are studied. It is established that the evolution of the optical properties with increasing annealing temperature is controlled by sequential transformation of Si clusters formed in the SiO{sub x} layers from nonphase inclusions to amorphous clusters and then to nanocrystals. The finally formed nanocrystals are limited in sizes by the thickness of the initial SiO{sub x} layers and by chemical reactions with ZrO{sub 2}.
  • Radiation-resistant silicon-on-insulator structures were produced by N{sup +} ion implantation into thermally grown SiO{sub 2} film and subsequent hydrogen transfer of the Si layer to the nitrogen-implanted substrate under conditions of vacuum wafer bonding. Accumulation of the carriers in the buried SiO{sub 2} was investigated as a function of fluence of nitrogen ions in the range (1-6)x10{sup 15} cm{sup 2} and as a function of total radiation dose ranging from 10{sup 4} to 10{sup 7} rad (Si). It was found that the charge generated near the nitrided bonding interface was reduced by a factor of four compared to the thermalmore » SiO{sub 2}/Si interface.« less