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Title: Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe

Abstract

A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.

Authors:
; ;  [1]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22649598
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 4; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; HALL EFFECT; MODIFICATIONS; PROBES; SEMICONDUCTOR MATERIALS; SURFACE POTENTIAL; SURFACES

Citation Formats

Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru, Sheglov, D. V., and Latyshev, A. V.. Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe. United States: N. p., 2017. Web. doi:10.1134/S1063782617040091.
Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru, Sheglov, D. V., & Latyshev, A. V.. Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe. United States. doi:10.1134/S1063782617040091.
Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru, Sheglov, D. V., and Latyshev, A. V.. Sat . "Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe". United States. doi:10.1134/S1063782617040091.
@article{osti_22649598,
title = {Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe},
author = {Kozhukhov, A. S., E-mail: antonkozhukhov@yandex.ru and Sheglov, D. V. and Latyshev, A. V.},
abstractNote = {A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.},
doi = {10.1134/S1063782617040091},
journal = {Semiconductors},
number = 4,
volume = 51,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2017},
month = {Sat Apr 15 00:00:00 EDT 2017}
}