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Title: Electron mobility in the inversion layers of fully depleted SOI films

Abstract

The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

Authors:
; ;  [1]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22649597
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 4; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; ELECTRONS; INTERFACES; LAYERS; MOS TRANSISTORS; PHONONS; SCATTERING; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SURFACES; THIN FILMS

Citation Formats

Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru, Naumova, O. V., and Fomin, B. I. Electron mobility in the inversion layers of fully depleted SOI films. United States: N. p., 2017. Web. doi:10.1134/S1063782617040248.
Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru, Naumova, O. V., & Fomin, B. I. Electron mobility in the inversion layers of fully depleted SOI films. United States. doi:10.1134/S1063782617040248.
Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru, Naumova, O. V., and Fomin, B. I. Sat . "Electron mobility in the inversion layers of fully depleted SOI films". United States. doi:10.1134/S1063782617040248.
@article{osti_22649597,
title = {Electron mobility in the inversion layers of fully depleted SOI films},
author = {Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru and Naumova, O. V. and Fomin, B. I.},
abstractNote = {The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.},
doi = {10.1134/S1063782617040248},
journal = {Semiconductors},
number = 4,
volume = 51,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2017},
month = {Sat Apr 15 00:00:00 EDT 2017}
}