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Title: Electron mobility in the inversion layers of fully depleted SOI films

Abstract

The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.

Authors:
; ;  [1]
  1. Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22649597
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 4; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; DIELECTRIC MATERIALS; ELECTRON MOBILITY; ELECTRONS; INTERFACES; LAYERS; MOS TRANSISTORS; PHONONS; SCATTERING; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SURFACES; THIN FILMS

Citation Formats

Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru, Naumova, O. V., and Fomin, B. I. Electron mobility in the inversion layers of fully depleted SOI films. United States: N. p., 2017. Web. doi:10.1134/S1063782617040248.
Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru, Naumova, O. V., & Fomin, B. I. Electron mobility in the inversion layers of fully depleted SOI films. United States. doi:10.1134/S1063782617040248.
Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru, Naumova, O. V., and Fomin, B. I. Sat . "Electron mobility in the inversion layers of fully depleted SOI films". United States. doi:10.1134/S1063782617040248.
@article{osti_22649597,
title = {Electron mobility in the inversion layers of fully depleted SOI films},
author = {Zaitseva, E. G., E-mail: ZaytsevaElza@yandex.ru and Naumova, O. V. and Fomin, B. I.},
abstractNote = {The dependences of the electron mobility μ{sub eff} in the inversion layers of fully depleted double–gate silicon-on-insulator (SOI) metal–oxide–semiconductor (MOS) transistors on the density N{sub e} of induced charge carriers and temperature T are investigated at different states of the SOI film (inversion–accumulation) from the side of one of the gates. It is shown that at a high density of induced charge carriers of N{sub e} > 6 × 10{sup 12} cm{sup –2} the μeff(T) dependences allow the components of mobility μ{sub eff} that are related to scattering at surface phonons and from the film/insulator surface roughness to be distinguished. The μ{sub eff}(N{sub e}) dependences can be approximated by the power functions μ{sub eff}(N{sub e}) ∝ N{sub e}{sup −n}. The exponents n in the dependences and the dominant mechanisms of scattering of electrons induced near the interface between the SOI film and buried oxide are determined for different N{sub e} ranges and film states from the surface side.},
doi = {10.1134/S1063782617040248},
journal = {Semiconductors},
number = 4,
volume = 51,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2017},
month = {Sat Apr 15 00:00:00 EDT 2017}
}
  • The electron mobility µ{sub eff} in the accumulation mode is investigated for undepleted and fully depleted double-gate n{sup +}–n–n{sup +} silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFET). To determine the range of possible values of the mobility and the dominant scattering mechanisms in thin-film structures, it is proposed that the field dependence of the mobility µ{sub eff} be replaced with the dependence on the density N{sub e} of induced charge carriers. It is shown that the dependences µ{sub eff}(N{sub e}) can be approximated by the power functions µ{sub eff}(N{sub e}) ∝ N{sub e}{sup -n}, where the exponent n is determined bymore » the chargecarrier scattering mechanism as in the mobility field dependence. The values of the exponent n in the dependences µ{sub eff}(N{sub e}) are determined when the SOI-film mode near one of its surfaces varies from inversion to accumulation. The obtained results are explained from the viewpoint of the electron-density redistribution over the SOI-film thickness and changes in the scattering mechanisms.« less
  • The radiation induced front channel threshold voltage shift ({Delta}V{sub tl}) of fully-depleted MOSFETs fabricated in SIMOX is investigated and analyzed as a function of power supply voltage (V{sub DD}) from 5.5 to 1.2 volts. This work shows that the expected improvement in front channel radiation hardness by reducing V{sub DD} is not fully realized due to (1) a radiation induced off-set voltage at V{sub DD} = 0 V, and (2) enhanced coupling of the buried oxide charge to the front channel.
  • 1M SRAMs were fabricated on fully-depleted SOI using 0.5 {micro}m design rules. The SRAMs were evaluated for speed/power, prompt dose upset, SEE, and total dose hardness. As compared to the identical design fabricated on bulk CMOS, improved results were seen for performance and prompt dose hardness. On the other hand, a low n-channel snapback voltage degraded the standby leakage, total dose hardness, and SEU hardness. The total dose hardness was expectedly low since no attempt was made to harden the buried oxide for this evaluation. This effort reflects the most complicated circuit reported on fully-depleted SOI.
  • An investigation was made of the influence of irradiation with fast (E=3.5 MeV) electrons on the Hall mobility of holes ..mu../sub H/ in structures with different thicknesses of the oxide layer under the gate electrode. The model of fluctuations of the surface potential was used to interpret the experimental results. The observed reduction in the carrier mobility in the channel after irradiation could be explained, for all the oxide thicknesses, by an increase in fluctuations of the potential in the course of accumulation of a radiation-induced charge in the oxide.
  • Electron transport properties in cubic silicon carbide ({beta}-SiC) quantized inversion layers have been studied and the results of electron mobility calculations at room and higher temperatures have been reported. To do so, we have developed a Monte Carlo simulator used in conjunction with the self-consistent solution of the Poisson and Schroedinger equations. We show that for a fixed inversion charge concentration, {beta}-SiC inversion layer electrons spread less into the bulk than Si ones as a consequence of the effective mass values. Therefore, the defects of the SiO{sub 2}/{beta}-SiC (interface roughness, charged centers) will strongly affect electron transport properties. We presentmore » simulated mobility curves for quantized {beta}-SiC inversion layers taking into account different scattering mechanisms which are then compared to Si mobility curves. Special attention has been paid to the effect of Coulomb scattering due to both interface- and oxide-trapped charges. Mobility curves obtained for different interface-trapped charge concentrations show that electrons in silicon carbide inversion layers are more affected by surface defects at room and higher temperatures than they are in silicon inversion layers. {copyright} {ital 1997 American Institute of Physics.}« less