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Title: Effect of gamma irradiation on the photoluminescence of porous silicon

Abstract

The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a change in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C{sub 60} layer are stable to gamma irradiation and oxidation.

Authors:
;  [1];  [2];  [1];  [2]
  1. Peter the Great St. Petersburg Polytechnic University (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22649589
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 4; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTROCHEMISTRY; EMISSION SPECTRA; FULLERENES; GAMMA RADIATION; HYDROGEN; IRRADIATION; LAYERS; MATERIALS RECOVERY; OXIDATION; PASSIVATION; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; POROUS MATERIALS; RADIATION DOSES; SILICON; SURFACES

Citation Formats

Elistratova, M. A., E-mail: Marina.Elistratova@mail.ioffe.ru, Romanov, N. M., Goryachev, D. N., Zakharova, I. B., and Sreseli, O. M.. Effect of gamma irradiation on the photoluminescence of porous silicon. United States: N. p., 2017. Web. doi:10.1134/S1063782617040029.
Elistratova, M. A., E-mail: Marina.Elistratova@mail.ioffe.ru, Romanov, N. M., Goryachev, D. N., Zakharova, I. B., & Sreseli, O. M.. Effect of gamma irradiation on the photoluminescence of porous silicon. United States. doi:10.1134/S1063782617040029.
Elistratova, M. A., E-mail: Marina.Elistratova@mail.ioffe.ru, Romanov, N. M., Goryachev, D. N., Zakharova, I. B., and Sreseli, O. M.. Sat . "Effect of gamma irradiation on the photoluminescence of porous silicon". United States. doi:10.1134/S1063782617040029.
@article{osti_22649589,
title = {Effect of gamma irradiation on the photoluminescence of porous silicon},
author = {Elistratova, M. A., E-mail: Marina.Elistratova@mail.ioffe.ru and Romanov, N. M. and Goryachev, D. N. and Zakharova, I. B. and Sreseli, O. M.},
abstractNote = {The effect of gamma irradiation on the luminescence properties of porous silicon produced by the electrochemical technique is studied. Changes in the photoluminescence intensity between irradiation doses and over a period of several days after the last irradiation are recorded. The quenching of photoluminescence at low irradiation doses and recovery after further irradiation are registered. It is found that porous silicon is strongly oxidized after gamma irradiation and the oxidation process continues for several days after irradiation. It is conceived that the change in the photoluminescence spectra and intensity of porous silicon after gamma irradiation is caused by a change in the passivation type of the porous surface: instead of hydrogen passivation, more stable oxygen passivation is observed. To stabilize the photoluminescence spectra of porous silicon, the use of fullerenes is proposed. No considerable changes in the photoluminescence spectra during irradiation and up to 18 days after irradiation are detected in a porous silicon sample with a thermally deposited fullerene layer. It is shown that porous silicon samples with a deposited C{sub 60} layer are stable to gamma irradiation and oxidation.},
doi = {10.1134/S1063782617040029},
journal = {Semiconductors},
number = 4,
volume = 51,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2017},
month = {Sat Apr 15 00:00:00 EDT 2017}
}