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Title: Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

Abstract

The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

Authors:
;  [1]; ; ;  [2];  [1];  [3];  [1]
  1. Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)
  2. Moscow Technological University “MIREA” (Russian Federation)
  3. National Research Nuclear University “MEPhI” (Russian Federation)
Publication Date:
OSTI Identifier:
22649586
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 4; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANTENNAS; CRYSTAL STRUCTURE; EMISSION SPECTROSCOPY; ENERGY EFFICIENCY; GALLIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOCONDUCTIVITY; RADIATION DETECTORS; SUBSTRATES; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS

Citation Formats

Galiev, G. B., Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru, Buriakov, A. M., Bilyk, V. R., Mishina, E. D., Klimov, E. A., Vasil’evskii, I. S., and Maltsev, P. P.. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates. United States: N. p., 2017. Web. doi:10.1134/S1063782617040054.
Galiev, G. B., Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru, Buriakov, A. M., Bilyk, V. R., Mishina, E. D., Klimov, E. A., Vasil’evskii, I. S., & Maltsev, P. P.. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates. United States. doi:10.1134/S1063782617040054.
Galiev, G. B., Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru, Buriakov, A. M., Bilyk, V. R., Mishina, E. D., Klimov, E. A., Vasil’evskii, I. S., and Maltsev, P. P.. Sat . "Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates". United States. doi:10.1134/S1063782617040054.
@article{osti_22649586,
title = {Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates},
author = {Galiev, G. B. and Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru and Buriakov, A. M. and Bilyk, V. R. and Mishina, E. D. and Klimov, E. A. and Vasil’evskii, I. S. and Maltsev, P. P.},
abstractNote = {The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.},
doi = {10.1134/S1063782617040054},
journal = {Semiconductors},
number = 4,
volume = 51,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2017},
month = {Sat Apr 15 00:00:00 EDT 2017}
}