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Title: Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme

Abstract

The dependences of the electronic-level positions and transition oscillator strengths on an applied electric field are studied for a terahertz quantum-cascade laser (THz QCL) with the resonant-phonon depopulation scheme, based on a cascade consisting of three quantum wells. The electric-field strengths for two characteristic states of the THz QCL under study are calculated: (i) “parasitic” current flow in the structure when the lasing threshold has not yet been reached; (ii) the lasing threshold is reached. Heat-transfer processes in the THz QCL under study are simulated to determine the optimum supply and cooling conditions. The conditions of thermocompression bonding of the laser ridge stripe with an n{sup +}-GaAs conductive substrate based on Au–Au are selected to produce a mechanically stronger contact with a higher thermal conductivity.

Authors:
; ; ; ; ; ;  [1];  [2]; ; ; ;  [3]
  1. Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)
  2. National Research University of Electronic Technology (MIET) (Russian Federation)
  3. Russian Academy of Sciences, Saint Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)
Publication Date:
OSTI Identifier:
22649584
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 4; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; ENERGY SPECTRA; GALLIUM ARSENIDES; GOLD; HEAT TRANSFER; LASERS; N-TYPE CONDUCTORS; OSCILLATOR STRENGTHS; PHONONS; QUANTUM WELLS; SIMULATION; SUBSTRATES; THERMAL CONDUCTIVITY

Citation Formats

Khabibullin, R. A., E-mail: khabibullin@isvch.ru, Shchavruk, N. V., Klochkov, A. N., Glinskiy, I. A., Zenchenko, N. V., Ponomarev, D. S., Maltsev, P. P., Zaycev, A. A., Zubov, F. I., Zhukov, A. E., Cirlin, G. E., and Alferov, Zh. I. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme. United States: N. p., 2017. Web. doi:10.1134/S106378261704008X.
Khabibullin, R. A., E-mail: khabibullin@isvch.ru, Shchavruk, N. V., Klochkov, A. N., Glinskiy, I. A., Zenchenko, N. V., Ponomarev, D. S., Maltsev, P. P., Zaycev, A. A., Zubov, F. I., Zhukov, A. E., Cirlin, G. E., & Alferov, Zh. I. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme. United States. doi:10.1134/S106378261704008X.
Khabibullin, R. A., E-mail: khabibullin@isvch.ru, Shchavruk, N. V., Klochkov, A. N., Glinskiy, I. A., Zenchenko, N. V., Ponomarev, D. S., Maltsev, P. P., Zaycev, A. A., Zubov, F. I., Zhukov, A. E., Cirlin, G. E., and Alferov, Zh. I. Sat . "Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme". United States. doi:10.1134/S106378261704008X.
@article{osti_22649584,
title = {Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme},
author = {Khabibullin, R. A., E-mail: khabibullin@isvch.ru and Shchavruk, N. V. and Klochkov, A. N. and Glinskiy, I. A. and Zenchenko, N. V. and Ponomarev, D. S. and Maltsev, P. P. and Zaycev, A. A. and Zubov, F. I. and Zhukov, A. E. and Cirlin, G. E. and Alferov, Zh. I.},
abstractNote = {The dependences of the electronic-level positions and transition oscillator strengths on an applied electric field are studied for a terahertz quantum-cascade laser (THz QCL) with the resonant-phonon depopulation scheme, based on a cascade consisting of three quantum wells. The electric-field strengths for two characteristic states of the THz QCL under study are calculated: (i) “parasitic” current flow in the structure when the lasing threshold has not yet been reached; (ii) the lasing threshold is reached. Heat-transfer processes in the THz QCL under study are simulated to determine the optimum supply and cooling conditions. The conditions of thermocompression bonding of the laser ridge stripe with an n{sup +}-GaAs conductive substrate based on Au–Au are selected to produce a mechanically stronger contact with a higher thermal conductivity.},
doi = {10.1134/S106378261704008X},
journal = {Semiconductors},
number = 4,
volume = 51,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2017},
month = {Sat Apr 15 00:00:00 EDT 2017}
}
  • A 3.1 THz phonon depopulation-based quantum-cascade-laser is investigated using terahertz time domain spectroscopy. A gain of 25 cm{sup -1} and absorption features due to the lower laser level being populated from a parasitic electronic channel are highlighted.
  • A Terahertz quantum cascade laser with a rather high injection coupling strength based on an indirectly pumped scheme is designed and experimentally implemented. To effectively suppress leakage current, the chosen quantum cascade module of the device is based on a five-well GaAs/Al{sub 0.25}Ga{sub 0.75}As structure. The device lases up to 151 K with a lasing frequency of 2.67 THz. This study shows that the effect of higher energy states in carrier transport and the long-range tunnel coupling between states that belong to non-neighbouring modules have to be considered in quantum design of structures with a narrow injector barrier. Moreover, the effectmore » of interface roughness scattering between the lasing states on threshold current is crucial.« less
  • We investigate the performance of terahertz quantum cascade lasers (THz-QCLs) based on Al{sub x}Ga{sub 1−x}As/Al{sub y}Ga{sub 1−y}As and GaSb/AlGaSb material systems to realize higher-temperature operation. Calculations with the non-equilibrium Green's function method reveal that the AlGaAs-well-based THz-QCLs do not show improved performance, mainly because of alloy scattering in the ternary compound semiconductor. The GaSb-based THz-QCLs offer clear advantages over GaAs-based THz-QCLs. Weaker longitudinal optical phonon–electron interaction in GaSb produces higher peaks in the spectral functions of the lasing levels, which enables more electrons to be accumulated in the upper lasing level.