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Title: In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

Abstract

Unrelaxed InAs{sub 1–x}Sb{sub x} (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs{sub 1–x}Sb{sub x} alloys is established.

Authors:
;  [1];  [2]; ; ; ;  [1]
  1. National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)
  2. Stony Brook, Stony Brook University (United States)
Publication Date:
OSTI Identifier:
22649583
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 4; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; CONCENTRATION RATIO; ENERGY SPECTRA; INDIUM ANTIMONIDES; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SPECTROSCOPY; RESOLUTION; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Guseynov, R. R., Tanriverdiyev, V. A., Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede, Aliyeva, Ye. N., Aliguliyeva, Kh. V., Abdullayev, N. A., E-mail: abnadir@mail.ru, and Mamedov, N. T.. In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers. United States: N. p., 2017. Web. doi:10.1134/S1063782617040066.
Guseynov, R. R., Tanriverdiyev, V. A., Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede, Aliyeva, Ye. N., Aliguliyeva, Kh. V., Abdullayev, N. A., E-mail: abnadir@mail.ru, & Mamedov, N. T.. In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers. United States. doi:10.1134/S1063782617040066.
Guseynov, R. R., Tanriverdiyev, V. A., Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede, Aliyeva, Ye. N., Aliguliyeva, Kh. V., Abdullayev, N. A., E-mail: abnadir@mail.ru, and Mamedov, N. T.. Sat . "In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers". United States. doi:10.1134/S1063782617040066.
@article{osti_22649583,
title = {In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers},
author = {Guseynov, R. R. and Tanriverdiyev, V. A. and Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede and Aliyeva, Ye. N. and Aliguliyeva, Kh. V. and Abdullayev, N. A., E-mail: abnadir@mail.ru and Mamedov, N. T.},
abstractNote = {Unrelaxed InAs{sub 1–x}Sb{sub x} (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs{sub 1–x}Sb{sub x} alloys is established.},
doi = {10.1134/S1063782617040066},
journal = {Semiconductors},
number = 4,
volume = 51,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2017},
month = {Sat Apr 15 00:00:00 EDT 2017}
}