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Title: In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

Abstract

Unrelaxed InAs{sub 1–x}Sb{sub x} (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs{sub 1–x}Sb{sub x} alloys is established.

Authors:
;  [1];  [2]; ; ; ;  [1]
  1. National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan)
  2. Stony Brook, Stony Brook University (United States)
Publication Date:
OSTI Identifier:
22649583
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 4; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM COMPOUNDS; CONCENTRATION RATIO; ENERGY SPECTRA; INDIUM ANTIMONIDES; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SPECTROSCOPY; RESOLUTION; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Guseynov, R. R., Tanriverdiyev, V. A., Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede, Aliyeva, Ye. N., Aliguliyeva, Kh. V., Abdullayev, N. A., E-mail: abnadir@mail.ru, and Mamedov, N. T. In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers. United States: N. p., 2017. Web. doi:10.1134/S1063782617040066.
Guseynov, R. R., Tanriverdiyev, V. A., Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede, Aliyeva, Ye. N., Aliguliyeva, Kh. V., Abdullayev, N. A., E-mail: abnadir@mail.ru, & Mamedov, N. T. In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers. United States. doi:10.1134/S1063782617040066.
Guseynov, R. R., Tanriverdiyev, V. A., Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede, Aliyeva, Ye. N., Aliguliyeva, Kh. V., Abdullayev, N. A., E-mail: abnadir@mail.ru, and Mamedov, N. T. Sat . "In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers". United States. doi:10.1134/S1063782617040066.
@article{osti_22649583,
title = {In As{sub 1–x}Sb{sub x} heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers},
author = {Guseynov, R. R. and Tanriverdiyev, V. A. and Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede and Aliyeva, Ye. N. and Aliguliyeva, Kh. V. and Abdullayev, N. A., E-mail: abnadir@mail.ru and Mamedov, N. T.},
abstractNote = {Unrelaxed InAs{sub 1–x}Sb{sub x} (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs{sub 1–x}Sb{sub x} alloys is established.},
doi = {10.1134/S1063782617040066},
journal = {Semiconductors},
number = 4,
volume = 51,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2017},
month = {Sat Apr 15 00:00:00 EDT 2017}
}
  • In this work we develop control over dislocation glide dynamics in Ga xIn 1-xP compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in Ga xIn 1-xP CGBs. When ordered Ga xIn 1-xP is graded from the GaAs lattice constant to InP, the order parametermore » ..eta.. decreases as x decreases, and dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a Ga xIn 1-xP CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage Ga xIn 1-xP CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Here, experimental results are analyzed within the context of a model that considers the force balance on dislocations on the two competing glide planes as a function of the degree of ordering.« less
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  • Unrelaxed InAs{sub 1-x}Sb{sub x} layers with lattice constants up to 2.1% larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs{sub 1-x}Sb{sub x} with given X. The InAs{sub 0.56}Sb{sub 0.44} layers demonstrate photoluminescence peak at 9.4 {mu}m at 150 K. The minority carrier lifetime measured at 77 K for InAs{sub 0.8}Sb{sub 0.2} was {tau} = 250 ns.
  • High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm{sup 2}/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.