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Title: Silicon nanowire array architecture for heterojunction electronics

Abstract

Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V{sub oc} = 0.8 V, short-circuit current I{sub sc} = 3.72 mA/cm{sup 2} and fill factor FF = 0.5 under illumination of 100 mW/cm{sup 2}.

Authors:
 [1];  [2]; ; ; ;  [1];  [3]
  1. Chernivtsi National University, Department of Electronics and Energy Engeneering (Ukraine)
  2. Helmholtz-Zentrum Berlin fur Materialien und Energie GmbH, Institute for Silicon Photovoltaics (Germany)
  3. National Aerospace University “Kharkiv Aviation Institute”, Department of Physics (Ukraine)
Publication Date:
OSTI Identifier:
22649581
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 51; Journal Issue: 4; Other Information: Copyright (c) 2017 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; FILL FACTORS; HETEROJUNCTIONS; ILLUMINANCE; MONOCRYSTALS; NANOWIRES; N-TYPE CONDUCTORS; POTENTIALS; P-TYPE CONDUCTORS; SILICON; SPUTTERING; SUBSTRATES; THIN FILMS; TITANIUM NITRIDES

Citation Formats

Solovan, M. M., E-mail: m.solovan@chnu.edu.ua, Brus, V. V., Mostovyi, A. I., Maryanchuk, P. D., Orletskyi, I. G., Kovaliuk, T. T., and Abashin, S. L.. Silicon nanowire array architecture for heterojunction electronics. United States: N. p., 2017. Web. doi:10.1134/S1063782617040200.
Solovan, M. M., E-mail: m.solovan@chnu.edu.ua, Brus, V. V., Mostovyi, A. I., Maryanchuk, P. D., Orletskyi, I. G., Kovaliuk, T. T., & Abashin, S. L.. Silicon nanowire array architecture for heterojunction electronics. United States. doi:10.1134/S1063782617040200.
Solovan, M. M., E-mail: m.solovan@chnu.edu.ua, Brus, V. V., Mostovyi, A. I., Maryanchuk, P. D., Orletskyi, I. G., Kovaliuk, T. T., and Abashin, S. L.. Sat . "Silicon nanowire array architecture for heterojunction electronics". United States. doi:10.1134/S1063782617040200.
@article{osti_22649581,
title = {Silicon nanowire array architecture for heterojunction electronics},
author = {Solovan, M. M., E-mail: m.solovan@chnu.edu.ua and Brus, V. V. and Mostovyi, A. I. and Maryanchuk, P. D. and Orletskyi, I. G. and Kovaliuk, T. T. and Abashin, S. L.},
abstractNote = {Photosensitive nanostructured heterojunctions n-TiN/p-Si were fabricated by means of titanium nitride thin films deposition (n-type conductivity) by the DC reactive magnetron sputtering onto nano structured single crystal substrates of p-type Si (100). The temperature dependencies of the height of the potential barrier and series resistance of the n-TiN/p-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias. The heterojunctions under investigation generate open-circuit voltage V{sub oc} = 0.8 V, short-circuit current I{sub sc} = 3.72 mA/cm{sup 2} and fill factor FF = 0.5 under illumination of 100 mW/cm{sup 2}.},
doi = {10.1134/S1063782617040200},
journal = {Semiconductors},
number = 4,
volume = 51,
place = {United States},
year = {Sat Apr 15 00:00:00 EDT 2017},
month = {Sat Apr 15 00:00:00 EDT 2017}
}