Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO{sub 2}/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy
- Siberian State Aerospace University (Russian Federation)
- Rzhanov Institute of Semiconductor Physics (Russian Federation)
- Russian Academy of Sciences, Siberian Branch, Institute of Chemistry and Chemical Technology (Russian Federation)
The SiO{sub 2}-concentration profile in the structure SiO{sub 2}/Si(111) is determined from experimental spectra of the cross section for the inelastic scattering of reflected electrons in the primary electron energy range from 300 to 3000 eV. The spectra are analyzed with the use of a proposed algorithm and developed computer program for simulating the spectra of the cross section for the inelastic scattering of reflected electrons for layered structures with an arbitrary number of layers, arbitrary thickness, and variable concentration of components in each layer. The best agreement between the calculated and experimental spectra is attained by varying the silicon dioxide and silicon concentrations in each layer. The results obtained can be used for profiling film-substrate structures with an arbitrary composition.
- OSTI ID:
- 22645597
- Journal Information:
- Semiconductors, Vol. 50, Issue 3; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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