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Title: Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime

Abstract

The sulfur passivation of the semi-insulating GaAs bulk (SI GaAs) grown in an excess phase of arsenic is used to observe the transition from the Coulomb blockade to the weak localization regime at room temperature. The I–V characteristics of the SI GaAs device reveal nonlinear behavior that appears to be evidence of the Coulomb blockade process as well as the Coulomb oscillations. The sulfur passivation of the SI GaAs device surface results in enormous transformation of the I–V characteristics that demonstrate the strong increase of the resistance and Coulomb blockade regime is replaced by the electron tunneling processes. The results obtained are analyzed within frameworks of disordering SI GaAs surface that is caused by inhomogeneous distribution of the donor and acceptor anti-site defects which affects the conditions of quantum- mechanical tunneling. Weak localization processes caused by the preservation of the Fermi level pinning are demonstrated by measuring the negative magnetoresistance in weak magnetic fields at room temperature. Finally, the studies of the magnetoresistance at higher magnetic fields reveal the h/2e Aharonov–Altshuler–Spivak oscillations with the complicated behavior due to possible statistical mismatch of the interference paths in the presence of different microdefects.

Authors:
 [1]; ; ; ; ;  [2]
  1. Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Division de Fisica Aplicada (Mexico)
  2. Ioffe Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22645561
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 50; Journal Issue: 4; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; COULOMB FIELD; ELECTRONS; FERMI LEVEL; GALLIUM ARSENIDES; INTERFERENCE; MAGNETIC FIELDS; MAGNETORESISTANCE; OSCILLATIONS; PASSIVATION; QUANTUM MECHANICS; SEMICONDUCTOR MATERIALS; SULFUR; TEMPERATURE RANGE 0273-0400 K; TUNNEL EFFECT

Citation Formats

Bagraev, N. T., E-mail: Bagraev@mail.ioffe.ru, Chaikina, E. I., Danilovskii, E. Yu., Gets, D. S., Klyachkin, L. E., L’vova, T. V., and Malyarenko, A. M. Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime. United States: N. p., 2016. Web. doi:10.1134/S1063782616040060.
Bagraev, N. T., E-mail: Bagraev@mail.ioffe.ru, Chaikina, E. I., Danilovskii, E. Yu., Gets, D. S., Klyachkin, L. E., L’vova, T. V., & Malyarenko, A. M. Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime. United States. https://doi.org/10.1134/S1063782616040060
Bagraev, N. T., E-mail: Bagraev@mail.ioffe.ru, Chaikina, E. I., Danilovskii, E. Yu., Gets, D. S., Klyachkin, L. E., L’vova, T. V., and Malyarenko, A. M. Fri . "Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime". United States. https://doi.org/10.1134/S1063782616040060.
@article{osti_22645561,
title = {Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime},
author = {Bagraev, N. T., E-mail: Bagraev@mail.ioffe.ru and Chaikina, E. I. and Danilovskii, E. Yu. and Gets, D. S. and Klyachkin, L. E. and L’vova, T. V. and Malyarenko, A. M.},
abstractNote = {The sulfur passivation of the semi-insulating GaAs bulk (SI GaAs) grown in an excess phase of arsenic is used to observe the transition from the Coulomb blockade to the weak localization regime at room temperature. The I–V characteristics of the SI GaAs device reveal nonlinear behavior that appears to be evidence of the Coulomb blockade process as well as the Coulomb oscillations. The sulfur passivation of the SI GaAs device surface results in enormous transformation of the I–V characteristics that demonstrate the strong increase of the resistance and Coulomb blockade regime is replaced by the electron tunneling processes. The results obtained are analyzed within frameworks of disordering SI GaAs surface that is caused by inhomogeneous distribution of the donor and acceptor anti-site defects which affects the conditions of quantum- mechanical tunneling. Weak localization processes caused by the preservation of the Fermi level pinning are demonstrated by measuring the negative magnetoresistance in weak magnetic fields at room temperature. Finally, the studies of the magnetoresistance at higher magnetic fields reveal the h/2e Aharonov–Altshuler–Spivak oscillations with the complicated behavior due to possible statistical mismatch of the interference paths in the presence of different microdefects.},
doi = {10.1134/S1063782616040060},
url = {https://www.osti.gov/biblio/22645561}, journal = {Semiconductors},
issn = {1063-7826},
number = 4,
volume = 50,
place = {United States},
year = {2016},
month = {4}
}