skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Accumulated distribution of material gain at dislocation crystal growth

Abstract

A model for slowing down the tangential growth rate of an elementary step at dislocation crystal growth is proposed based on the exponential law of impurity particle distribution over adsorption energy. It is established that the statistical distribution of material gain on structurally equivalent faces obeys the Erlang law. The Erlang distribution is proposed to be used to calculate the occurrence rates of morphological combinatorial types of polyhedra, presenting real simple crystallographic forms.

Authors:
 [1]
  1. Russian Academy of Sciences, Institute of Geology, Komi Science Center, Ural Branch (Russian Federation)
Publication Date:
OSTI Identifier:
22645514
Resource Type:
Journal Article
Journal Name:
Crystallography Reports
Additional Journal Information:
Journal Volume: 61; Journal Issue: 3; Other Information: Copyright (c) 2016 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7745
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL GROWTH; CRYSTALLOGRAPHY; DISLOCATIONS; IMPURITIES

Citation Formats

Rakin, V. I., E-mail: rakin@geo.komisc.ru. Accumulated distribution of material gain at dislocation crystal growth. United States: N. p., 2016. Web. doi:10.1134/S1063774516020152.
Rakin, V. I., E-mail: rakin@geo.komisc.ru. Accumulated distribution of material gain at dislocation crystal growth. United States. doi:10.1134/S1063774516020152.
Rakin, V. I., E-mail: rakin@geo.komisc.ru. Sun . "Accumulated distribution of material gain at dislocation crystal growth". United States. doi:10.1134/S1063774516020152.
@article{osti_22645514,
title = {Accumulated distribution of material gain at dislocation crystal growth},
author = {Rakin, V. I., E-mail: rakin@geo.komisc.ru},
abstractNote = {A model for slowing down the tangential growth rate of an elementary step at dislocation crystal growth is proposed based on the exponential law of impurity particle distribution over adsorption energy. It is established that the statistical distribution of material gain on structurally equivalent faces obeys the Erlang law. The Erlang distribution is proposed to be used to calculate the occurrence rates of morphological combinatorial types of polyhedra, presenting real simple crystallographic forms.},
doi = {10.1134/S1063774516020152},
journal = {Crystallography Reports},
issn = {1063-7745},
number = 3,
volume = 61,
place = {United States},
year = {2016},
month = {5}
}