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Title: Optical properties of In{sub 2}Se{sub 3} thin films

Abstract

In{sub 2}Se{sub 3} films are produced by ion-beam evaporation at substrate temperatures of 313 and 623 K. As the target, In{sub 2}Se{sub 3} single crystals grown by the vertical Bridgman method are used. The composition and structure of the crystals and films are determined by the X-ray spectral analysis and X-ray diffraction techniques, respectively. It is established that the crystals and films crystallize with the formation of a hexagonal structure. The band gap and refractive index of the In{sub 2}Se{sub 3} films are determined from the transmittance and reflectance spectra. It is found that, as the substrate temperature is increased, the band gap increases.

Authors:
 [1]
  1. Belarusian State University of Information and Radio Electronics (Belarus)
Publication Date:
OSTI Identifier:
22645511
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 6; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTRA; BRIDGMAN METHOD; ENERGY GAP; EVAPORATION; INDIUM SELENIDES; ION BEAMS; MONOCRYSTALS; REFRACTIVE INDEX; SPECTRAL REFLECTANCE; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Bodnar, I. V., E-mail: chemzav@bsuir.by. Optical properties of In{sub 2}Se{sub 3} thin films. United States: N. p., 2016. Web. doi:10.1134/S1063782616060026.
Bodnar, I. V., E-mail: chemzav@bsuir.by. Optical properties of In{sub 2}Se{sub 3} thin films. United States. doi:10.1134/S1063782616060026.
Bodnar, I. V., E-mail: chemzav@bsuir.by. Wed . "Optical properties of In{sub 2}Se{sub 3} thin films". United States. doi:10.1134/S1063782616060026.
@article{osti_22645511,
title = {Optical properties of In{sub 2}Se{sub 3} thin films},
author = {Bodnar, I. V., E-mail: chemzav@bsuir.by},
abstractNote = {In{sub 2}Se{sub 3} films are produced by ion-beam evaporation at substrate temperatures of 313 and 623 K. As the target, In{sub 2}Se{sub 3} single crystals grown by the vertical Bridgman method are used. The composition and structure of the crystals and films are determined by the X-ray spectral analysis and X-ray diffraction techniques, respectively. It is established that the crystals and films crystallize with the formation of a hexagonal structure. The band gap and refractive index of the In{sub 2}Se{sub 3} films are determined from the transmittance and reflectance spectra. It is found that, as the substrate temperature is increased, the band gap increases.},
doi = {10.1134/S1063782616060026},
journal = {Semiconductors},
number = 6,
volume = 50,
place = {United States},
year = {Wed Jun 15 00:00:00 EDT 2016},
month = {Wed Jun 15 00:00:00 EDT 2016}
}