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Title: Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment

Abstract

The effect of thermal annealing in the temperature range 800 ⩽ T{sub ann} ⩽ 1200°C and of two cooling rates (v{sub cl} = 1 and 15°C min{sup –1}) upon a change in the concentration of charge carriers in the conduction band, their mobility, and tensoresistance in n-Si crystals doped by nuclear transmutation and doped with phosphorus impurity via the melt (during growth by the Czochralski method) was investigated. It is found that, after annealing of all of the crystals at T{sub ann} = 1050–1100°C, the concentration of charge carriers is increased by a factor of 1.3–1.7 compared to the initial concentration (irrespective of the method of doping). The specific annealing-temperature-dependent effect of cooling with a rate of 15°C min{sup –1} on the properties of transmutation-doped n-Si:P crystals is detected.

Authors:
 [1];  [2]
  1. National Academy of Sciences of Ukraine, Institute for Nuclear Research (Ukraine)
  2. National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)
Publication Date:
OSTI Identifier:
22645508
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 6; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CARRIER MOBILITY; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; COOLING; CRYSTALS; CZOCHRALSKI METHOD; DOPED MATERIALS; ELECTRONIC STRUCTURE; N-TYPE CONDUCTORS; PHOSPHORUS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K

Citation Formats

Gaidar, G. P., E-mail: gaydar@kinr.kiev.ua, and Baranskii, P. I.. Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment. United States: N. p., 2016. Web. doi:10.1134/S1063782616060063.
Gaidar, G. P., E-mail: gaydar@kinr.kiev.ua, & Baranskii, P. I.. Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment. United States. doi:10.1134/S1063782616060063.
Gaidar, G. P., E-mail: gaydar@kinr.kiev.ua, and Baranskii, P. I.. 2016. "Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment". United States. doi:10.1134/S1063782616060063.
@article{osti_22645508,
title = {Specific features of the electrophysical parameters of NTD Si treated under different conditions of heat treatment},
author = {Gaidar, G. P., E-mail: gaydar@kinr.kiev.ua and Baranskii, P. I.},
abstractNote = {The effect of thermal annealing in the temperature range 800 ⩽ T{sub ann} ⩽ 1200°C and of two cooling rates (v{sub cl} = 1 and 15°C min{sup –1}) upon a change in the concentration of charge carriers in the conduction band, their mobility, and tensoresistance in n-Si crystals doped by nuclear transmutation and doped with phosphorus impurity via the melt (during growth by the Czochralski method) was investigated. It is found that, after annealing of all of the crystals at T{sub ann} = 1050–1100°C, the concentration of charge carriers is increased by a factor of 1.3–1.7 compared to the initial concentration (irrespective of the method of doping). The specific annealing-temperature-dependent effect of cooling with a rate of 15°C min{sup –1} on the properties of transmutation-doped n-Si:P crystals is detected.},
doi = {10.1134/S1063782616060063},
journal = {Semiconductors},
number = 6,
volume = 50,
place = {United States},
year = 2016,
month = 6
}
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