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Title: On the ohmicity of Schottky contacts

Abstract

The conditions under which Schottky contacts become ohmic are analyzed. Proceeding from classical concepts of the mechanisms of current flow, a generalized Schottky contact model is investigated. This model takes into account the thermionic current of majority charge carriers and the recombination current of minority carriers in Schottky contacts with a dielectric gap. Based on an analysis of the predictions of this model, ohmicity criteria are obtained for Schottky contacts and the conditions for a low injection level and the ohmicity of Si-based Schottky contacts are compared. It is shown that the conditions for Schottky-contact ohmicity do not coincide with those for p–n junctions.

Authors:
; ;  [1]
  1. National Academy of Sciences of Ukraine, Lashkaryov Institute of Semiconductor Physics (Ukraine)
Publication Date:
OSTI Identifier:
22645504
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 6; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHARGE CARRIERS; COMPARATIVE EVALUATIONS; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; P-N JUNCTIONS; RECOMBINATION; SCHOTTKY EFFECT; THERMIONICS

Citation Formats

Sachenko, A. V., E-mail: sach@isp.kiev.ua, Belyaev, A. E., and Konakova, R. V. On the ohmicity of Schottky contacts. United States: N. p., 2016. Web. doi:10.1134/S106378261606021X.
Sachenko, A. V., E-mail: sach@isp.kiev.ua, Belyaev, A. E., & Konakova, R. V. On the ohmicity of Schottky contacts. United States. doi:10.1134/S106378261606021X.
Sachenko, A. V., E-mail: sach@isp.kiev.ua, Belyaev, A. E., and Konakova, R. V. Wed . "On the ohmicity of Schottky contacts". United States. doi:10.1134/S106378261606021X.
@article{osti_22645504,
title = {On the ohmicity of Schottky contacts},
author = {Sachenko, A. V., E-mail: sach@isp.kiev.ua and Belyaev, A. E. and Konakova, R. V.},
abstractNote = {The conditions under which Schottky contacts become ohmic are analyzed. Proceeding from classical concepts of the mechanisms of current flow, a generalized Schottky contact model is investigated. This model takes into account the thermionic current of majority charge carriers and the recombination current of minority carriers in Schottky contacts with a dielectric gap. Based on an analysis of the predictions of this model, ohmicity criteria are obtained for Schottky contacts and the conditions for a low injection level and the ohmicity of Si-based Schottky contacts are compared. It is shown that the conditions for Schottky-contact ohmicity do not coincide with those for p–n junctions.},
doi = {10.1134/S106378261606021X},
journal = {Semiconductors},
number = 6,
volume = 50,
place = {United States},
year = {Wed Jun 15 00:00:00 EDT 2016},
month = {Wed Jun 15 00:00:00 EDT 2016}
}