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Title: Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers

Abstract

The electroluminescent properties of a light-emitting diode n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers are studied in the temperature range of 290–470 K. An atypical temperature increase in the power of the long-wavelength luminescence band with an energy of 0.3 eV is experimentally observed. As the temperature increases to 470 K, the optical radiation power increases by a factor of 1.5–2. To explain the extraordinary temperature dependence of the radiation power, the recombination and carrier transport processes are theoretically analyzed in the heterostructure under study.

Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22645501
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 6; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CHARGE CARRIERS; ELECTROLUMINESCENCE; GALLIUM ANTIMONIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; N-TYPE CONDUCTORS; POTENTIALS; RECOMBINATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Danilov, L. V., E-mail: danleon84@mail.ru, Petukhov, A. A., Mikhailova, M. P., Zegrya, G. G., Ivanov, E. V., and Yakovlev, Yu. P. Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers. United States: N. p., 2016. Web. doi:10.1134/S1063782616060038.
Danilov, L. V., E-mail: danleon84@mail.ru, Petukhov, A. A., Mikhailova, M. P., Zegrya, G. G., Ivanov, E. V., & Yakovlev, Yu. P. Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers. United States. doi:10.1134/S1063782616060038.
Danilov, L. V., E-mail: danleon84@mail.ru, Petukhov, A. A., Mikhailova, M. P., Zegrya, G. G., Ivanov, E. V., and Yakovlev, Yu. P. 2016. "Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers". United States. doi:10.1134/S1063782616060038.
@article{osti_22645501,
title = {Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers},
author = {Danilov, L. V., E-mail: danleon84@mail.ru and Petukhov, A. A. and Mikhailova, M. P. and Zegrya, G. G. and Ivanov, E. V. and Yakovlev, Yu. P.},
abstractNote = {The electroluminescent properties of a light-emitting diode n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers are studied in the temperature range of 290–470 K. An atypical temperature increase in the power of the long-wavelength luminescence band with an energy of 0.3 eV is experimentally observed. As the temperature increases to 470 K, the optical radiation power increases by a factor of 1.5–2. To explain the extraordinary temperature dependence of the radiation power, the recombination and carrier transport processes are theoretically analyzed in the heterostructure under study.},
doi = {10.1134/S1063782616060038},
journal = {Semiconductors},
number = 6,
volume = 50,
place = {United States},
year = 2016,
month = 6
}
  • The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface ({Delta}E{sub c} = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence (EL) spectrum. In the entire temperature range under study, T = 290-480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated as a result of the conduction-band offset. These pairs contribute to radiative recombination,more » which leads to a nonlinear increase in the EL intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290-345 K, and a linear increase is observed at T > 345 K. This work for the first time reports an increase in the emission power of a light-emitting diode structure with increasing temperature. It is shown that this rise is caused by a decrease in the threshold energy of the impact ionization due to narrowing of the band gap of the active region.« less
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  • A new type of light-emitting diodes (LEDs), a high-efficiency device based on an n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb thyristor heterostructure, with the maximum emission intensity at wavelength {lambda} = 1.95 {mu}m, has been suggested and its electrical and luminescent characteristics have been studied. It is shown that the effective radiative recombination in the thyristor structure in the n-type GaInAsSb active region is provided by double-sided injection of holes from the neighboring p-type regions. The maximum internal quantum efficiency of 77% was achieved in the structure under study in the pulsed mode. The average optical power was as high as 2.5 mW, and the peakmore » power in the pulsed mode was 71 mW, which exceeded by a factor of 2.9 the power obtained with a standard n-GaSb/n-GaInAsSb/P-AlGaAsSb LED operating in the same spectral range. The approach suggested will make it possible to improve LED parameters in the entire mid-IR spectral range (2-5 {mu}m)« less
  • The authors make a detailed study of the temperature dependencies of the internal parameters of GaSb/AlGaAsSb laser diodes in order to determine the factors responsible for the strong temperature dependence of the threshold and lasing power of heterolasers of this type. They conclude that the drop in lasing power with increasing temperature occurs as a result of both the increase in the threshold current density and the drop in the differential internal quantum yield.
  • In/sub 0.16/Ga/sub 0.84/As/sub 0.15/Sb/sub 0.85//Al/sub 0.35/Ga/sub 0.65/Sb double heterostructure injection lasers have been grown by molecular beam epitaxy on (100) GaSb substrates. Room-temperature operation near 2.2 ..mu..m wavelength has been achieved under pulsed conditions. Low pulsed threshold current density of 4.2 kA/cm/sup 2/ and a characteristic temperature of T/sub 0/--26 K have been obtained.