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Title: Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers

Abstract

The electroluminescent properties of a light-emitting diode n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers are studied in the temperature range of 290–470 K. An atypical temperature increase in the power of the long-wavelength luminescence band with an energy of 0.3 eV is experimentally observed. As the temperature increases to 470 K, the optical radiation power increases by a factor of 1.5–2. To explain the extraordinary temperature dependence of the radiation power, the recombination and carrier transport processes are theoretically analyzed in the heterostructure under study.

Authors:
; ; ; ; ;  [1]
  1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22645501
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 6; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CHARGE CARRIERS; ELECTROLUMINESCENCE; GALLIUM ANTIMONIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; N-TYPE CONDUCTORS; POTENTIALS; RECOMBINATION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K

Citation Formats

Danilov, L. V., E-mail: danleon84@mail.ru, Petukhov, A. A., Mikhailova, M. P., Zegrya, G. G., Ivanov, E. V., and Yakovlev, Yu. P. Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers. United States: N. p., 2016. Web. doi:10.1134/S1063782616060038.
Danilov, L. V., E-mail: danleon84@mail.ru, Petukhov, A. A., Mikhailova, M. P., Zegrya, G. G., Ivanov, E. V., & Yakovlev, Yu. P. Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers. United States. doi:10.1134/S1063782616060038.
Danilov, L. V., E-mail: danleon84@mail.ru, Petukhov, A. A., Mikhailova, M. P., Zegrya, G. G., Ivanov, E. V., and Yakovlev, Yu. P. Wed . "Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers". United States. doi:10.1134/S1063782616060038.
@article{osti_22645501,
title = {Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers},
author = {Danilov, L. V., E-mail: danleon84@mail.ru and Petukhov, A. A. and Mikhailova, M. P. and Zegrya, G. G. and Ivanov, E. V. and Yakovlev, Yu. P.},
abstractNote = {The electroluminescent properties of a light-emitting diode n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers are studied in the temperature range of 290–470 K. An atypical temperature increase in the power of the long-wavelength luminescence band with an energy of 0.3 eV is experimentally observed. As the temperature increases to 470 K, the optical radiation power increases by a factor of 1.5–2. To explain the extraordinary temperature dependence of the radiation power, the recombination and carrier transport processes are theoretically analyzed in the heterostructure under study.},
doi = {10.1134/S1063782616060038},
journal = {Semiconductors},
number = 6,
volume = 50,
place = {United States},
year = {Wed Jun 15 00:00:00 EDT 2016},
month = {Wed Jun 15 00:00:00 EDT 2016}
}