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Title: Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes

Abstract

The dependences of the electrical characteristics of thin-film structures with Schottky barrier on gallium arsenide are studied using Monte Carlo numerical simulation in the kinetic approximation with the main scattering mechanisms taken into account. The dependences of the diode conductivity on the voltage and channel thickness are obtained. It is shown that the relation between the diode voltage and conductivity changes at a small channel thickness, which is explained by barrier field expulsion to the substrate.

Authors:
; ; ; ;  [1]
  1. Vernadsky Crimean Federal University (Russian Federation)
Publication Date:
OSTI Identifier:
22645497
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 6; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COMPUTERIZED SIMULATION; DIFFUSION BARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GALLIUM ARSENIDES; KINETICS; MONTE CARLO METHOD; SCATTERING; SCHOTTKY BARRIER DIODES; SUBSTRATES; THIN FILMS

Citation Formats

Zuev, S. A., E-mail: sazuev@yandex.ru, Kilessa, G. V., Asanov, E. E., Starostenko, V. V., and Pokrova, S. V. Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes. United States: N. p., 2016. Web. doi:10.1134/S1063782616060269.
Zuev, S. A., E-mail: sazuev@yandex.ru, Kilessa, G. V., Asanov, E. E., Starostenko, V. V., & Pokrova, S. V. Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes. United States. doi:10.1134/S1063782616060269.
Zuev, S. A., E-mail: sazuev@yandex.ru, Kilessa, G. V., Asanov, E. E., Starostenko, V. V., and Pokrova, S. V. 2016. "Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes". United States. doi:10.1134/S1063782616060269.
@article{osti_22645497,
title = {Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes},
author = {Zuev, S. A., E-mail: sazuev@yandex.ru and Kilessa, G. V. and Asanov, E. E. and Starostenko, V. V. and Pokrova, S. V.},
abstractNote = {The dependences of the electrical characteristics of thin-film structures with Schottky barrier on gallium arsenide are studied using Monte Carlo numerical simulation in the kinetic approximation with the main scattering mechanisms taken into account. The dependences of the diode conductivity on the voltage and channel thickness are obtained. It is shown that the relation between the diode voltage and conductivity changes at a small channel thickness, which is explained by barrier field expulsion to the substrate.},
doi = {10.1134/S1063782616060269},
journal = {Semiconductors},
number = 6,
volume = 50,
place = {United States},
year = 2016,
month = 6
}
  • Data are presented which show that the Schottky barrier height for gold on the ternary compound GaAs/sub 1-x/P/sub x/ follows the commonly assumed two-thirds of the band gap relationship. An explanation is given for the reason that previously published data did not exhibit this behavior.
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