Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes

Journal Article · Wed Jun 15 00:00:00 EDT 2016 · Semiconductors

DOI:https://doi.org/10.1134/S1063782616060269· OSTI ID:22645497

Kilessa, G. V.; Asanov, E. E.; Starostenko, V. V.; Pokrova, S. V. ^[1]

---

1. Vernadsky Crimean Federal University (Russian Federation)

The dependences of the electrical characteristics of thin-film structures with Schottky barrier on gallium arsenide are studied using Monte Carlo numerical simulation in the kinetic approximation with the main scattering mechanisms taken into account. The dependences of the diode conductivity on the voltage and channel thickness are obtained. It is shown that the relation between the diode voltage and conductivity changes at a small channel thickness, which is explained by barrier field expulsion to the substrate.

• OSTI ID: 22645497
• Journal Information: Semiconductors, Vol. 50, Issue 6; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPUTERIZED SIMULATION
DIFFUSION BARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
KINETICS
MONTE CARLO METHOD
SCATTERING
SCHOTTKY BARRIER DIODES
SUBSTRATES
THIN FILMS