On the photon annealing of silicon-implanted gallium-nitride layers
- OKB-Planeta, Inc. (Russian Federation)
- Novgorod State University (Russian Federation)
The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.
- OSTI ID:
- 22645495
- Journal Information:
- Semiconductors, Vol. 50, Issue 6; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Metalorganic Chemical Vapor Deposition Gallium Nitride with Fast Growth Rate for Vertical Power Device Applications
Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
Journal Article
·
Fri Jan 15 00:00:00 EST 2021
· Physica Status Solidi. A, Applications and Materials Science
·
OSTI ID:22645495
+3 more
Gas source molecular beam epitaxy of scandium nitride on silicon carbide and gallium nitride surfaces
Journal Article
·
Sat Nov 01 00:00:00 EDT 2014
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
·
OSTI ID:22645495
Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride
Journal Article
·
Mon Feb 15 00:00:00 EST 2016
· Semiconductors
·
OSTI ID:22645495
+9 more