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Title: On the photon annealing of silicon-implanted gallium-nitride layers

Abstract

The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.

Authors:
 [1];  [2];  [1]
  1. Novgorod State University (Russian Federation)
  2. OKB-Planeta, Inc. (Russian Federation)
Publication Date:
OSTI Identifier:
22645495
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 50; Journal Issue: 6; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CARRIER MOBILITY; CHARGE CARRIERS; COATINGS; CONCENTRATION RATIO; DOPED MATERIALS; GALLIUM; GALLIUM NITRIDES; LAYERS; PHOTONS; SILICON; SILICON IONS; SILICON OXIDES; SURFACES; TEMPERATURE DEPENDENCE

Citation Formats

Seleznev, B. I., E-mail: Boris.Seleznev@novsu.ru, Moskalev, G. Ya., and Fedorov, D. G.. On the photon annealing of silicon-implanted gallium-nitride layers. United States: N. p., 2016. Web. doi:10.1134/S1063782616060221.
Seleznev, B. I., E-mail: Boris.Seleznev@novsu.ru, Moskalev, G. Ya., & Fedorov, D. G.. On the photon annealing of silicon-implanted gallium-nitride layers. United States. doi:10.1134/S1063782616060221.
Seleznev, B. I., E-mail: Boris.Seleznev@novsu.ru, Moskalev, G. Ya., and Fedorov, D. G.. Wed . "On the photon annealing of silicon-implanted gallium-nitride layers". United States. doi:10.1134/S1063782616060221.
@article{osti_22645495,
title = {On the photon annealing of silicon-implanted gallium-nitride layers},
author = {Seleznev, B. I., E-mail: Boris.Seleznev@novsu.ru and Moskalev, G. Ya. and Fedorov, D. G.},
abstractNote = {The conditions for the formation of ion-doped layers in gallium nitride upon the incorporation of silicon ions followed by photon annealing in the presence of silicon dioxide and nitride coatings are analyzed. The conditions of the formation of ion-doped layers with a high degree of impurity activation are established. The temperature dependences of the surface concentration and mobility of charge carriers in ion-doped GaN layers annealed at different temperatures are studied.},
doi = {10.1134/S1063782616060221},
journal = {Semiconductors},
number = 6,
volume = 50,
place = {United States},
year = {Wed Jun 15 00:00:00 EDT 2016},
month = {Wed Jun 15 00:00:00 EDT 2016}
}