Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
- Lobachevsky State University of Nizhny Novgorod (NNSU) (Russian Federation)
- Russian Academy of Sciences, Institute for Semiconductor Physics, Siberian Branch (Russian Federation)
- Novosibirsk State University (Russian Federation)
- Universite Montpellier II, Laboratoire Charles Coulomb (L2C) (France)
The interband photoconductivity and photoluminescence in narrow-gap HgCdTe-based waveguide structures with quantum wells (QWs) (designed for long-wavelength stimulated emission under optical pumping) are investigated. The photoconductivity relaxation times in n-type structures reach several microseconds, due to which stimulated emission at a wavelength of 10.2 μm occurs at a low threshold pump intensity (~100 W/cm{sup 2}) at 20 K. In the p-type structures obtained by annealing (to increase the mercury vacancy concentration), even spontaneous emission from the QWs is not detected because of a dramatic decrease in the carrier lifetime with respect to Shockley–Read–Hall nonradiative recombination.
- OSTI ID:
- 22645276
- Journal Information:
- Semiconductors, Vol. 50, Issue 12; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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