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Title: The possibility of identifying the spatial location of single dislocations by topo-tomography on laboratory setups

Abstract

The spatial arrangement of single linear defects in a Si single crystal (input surface (111)) has been investigated by X-ray topo-tomography using laboratory X-ray sources. The experimental technique and the procedure of reconstructing a 3D image of dislocation half-loops near the Si crystal surface are described. The sizes of observed linear defects with a spatial resolution of about 10 μm are estimated.

Authors:
; ; ; ;  [1]
  1. Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation)
Publication Date:
OSTI Identifier:
22645268
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystallography Reports; Journal Volume: 62; Journal Issue: 1; Other Information: Copyright (c) 2017 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DISLOCATIONS; MONOCRYSTALS; SILICON; SPATIAL RESOLUTION; TOMOGRAPHY; TRIOCTYLPHOSPHINE OXIDE; X RADIATION; X-RAY SOURCES

Citation Formats

Zolotov, D. A., E-mail: zolotovden@crys.ras.ru, Buzmakov, A. V., Elfimov, D. A., Asadchikov, V. E., and Chukhovskii, F. N. The possibility of identifying the spatial location of single dislocations by topo-tomography on laboratory setups. United States: N. p., 2017. Web. doi:10.1134/S1063774517010266.
Zolotov, D. A., E-mail: zolotovden@crys.ras.ru, Buzmakov, A. V., Elfimov, D. A., Asadchikov, V. E., & Chukhovskii, F. N. The possibility of identifying the spatial location of single dislocations by topo-tomography on laboratory setups. United States. doi:10.1134/S1063774517010266.
Zolotov, D. A., E-mail: zolotovden@crys.ras.ru, Buzmakov, A. V., Elfimov, D. A., Asadchikov, V. E., and Chukhovskii, F. N. Sun . "The possibility of identifying the spatial location of single dislocations by topo-tomography on laboratory setups". United States. doi:10.1134/S1063774517010266.
@article{osti_22645268,
title = {The possibility of identifying the spatial location of single dislocations by topo-tomography on laboratory setups},
author = {Zolotov, D. A., E-mail: zolotovden@crys.ras.ru and Buzmakov, A. V. and Elfimov, D. A. and Asadchikov, V. E. and Chukhovskii, F. N.},
abstractNote = {The spatial arrangement of single linear defects in a Si single crystal (input surface (111)) has been investigated by X-ray topo-tomography using laboratory X-ray sources. The experimental technique and the procedure of reconstructing a 3D image of dislocation half-loops near the Si crystal surface are described. The sizes of observed linear defects with a spatial resolution of about 10 μm are estimated.},
doi = {10.1134/S1063774517010266},
journal = {Crystallography Reports},
number = 1,
volume = 62,
place = {United States},
year = {Sun Jan 15 00:00:00 EST 2017},
month = {Sun Jan 15 00:00:00 EST 2017}
}
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