skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures

Abstract

Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level.

Authors:
; ;  [1]
  1. National Research Centre “Kurchatov Institute” (Russian Federation)
Publication Date:
OSTI Identifier:
22645195
Resource Type:
Journal Article
Resource Relation:
Journal Name: Crystallography Reports; Journal Volume: 62; Journal Issue: 2; Other Information: Copyright (c) 2017 Pleiades Publishing, Inc.; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; CRYSTALS; DEFECTS; DISLOCATIONS; GALLIUM ARSENIDES; INDIUM ARSENIDES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Trunkin, I. N., Presniakov, M. Yu., and Vasiliev, A. L., E-mail: a.vasiliev56@gmail.com. Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures. United States: N. p., 2017. Web. doi:10.1134/S1063774517020298.
Trunkin, I. N., Presniakov, M. Yu., & Vasiliev, A. L., E-mail: a.vasiliev56@gmail.com. Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures. United States. doi:10.1134/S1063774517020298.
Trunkin, I. N., Presniakov, M. Yu., and Vasiliev, A. L., E-mail: a.vasiliev56@gmail.com. Wed . "Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures". United States. doi:10.1134/S1063774517020298.
@article{osti_22645195,
title = {Crystal structure of stacking faults in InGaAs/InAlAs/InAs heterostructures},
author = {Trunkin, I. N. and Presniakov, M. Yu. and Vasiliev, A. L., E-mail: a.vasiliev56@gmail.com},
abstractNote = {Stacking faults and dislocations in InGaAs/InAlAs/InAs heterostructures have been studied by electron microscopy. The use of different techniques of transmission electron microscopy (primarily, highresolution dark-field scanning transmission electron microscopy) has made it possible to determine the defect structure at the atomic level.},
doi = {10.1134/S1063774517020298},
journal = {Crystallography Reports},
number = 2,
volume = 62,
place = {United States},
year = {Wed Mar 15 00:00:00 EDT 2017},
month = {Wed Mar 15 00:00:00 EDT 2017}
}