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Title: Dependence of energy resolution of a plane-parallel HPGe detector on bias voltage upon registration of low-energy X-rays

Abstract

In this study, we theoretically analyze the processes in a plane-parallel high-purity germanium (HPGe) detector. The generating function of factorial moments describing the process of registration of low-energy X-rays by the HPGe detector with consideration of capture of charge carriers by traps is obtained. It is demonstrated that the coefficients of expansion of the average signal amplitude and variance in power series over the quantity inversely proportional to the bias voltage of the detector allow one to determine the Fano factor, the product of the charge carrier lifetime and mobility, and other characteristics of the semiconductor material of the detector.

Authors:
 [1]
  1. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)
Publication Date:
OSTI Identifier:
22614031
Resource Type:
Journal Article
Journal Name:
Physics of Atomic Nuclei
Additional Journal Information:
Journal Volume: 79; Journal Issue: 9-10; Other Information: Copyright (c) 2016 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1063-7788
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; AMPLITUDES; CARRIER LIFETIME; CARRIER MOBILITY; CHARGE CARRIERS; ELECTRIC POTENTIAL; ENERGY RESOLUTION; FANO FACTOR; HIGH-PURITY GE DETECTORS; POWER SERIES; SEMICONDUCTOR MATERIALS; SIGNALS; X RADIATION

Citation Formats

Samedov, V. V., E-mail: v-samedov@yandex.ru. Dependence of energy resolution of a plane-parallel HPGe detector on bias voltage upon registration of low-energy X-rays. United States: N. p., 2016. Web. doi:10.1134/S1063778816090106.
Samedov, V. V., E-mail: v-samedov@yandex.ru. Dependence of energy resolution of a plane-parallel HPGe detector on bias voltage upon registration of low-energy X-rays. United States. https://doi.org/10.1134/S1063778816090106
Samedov, V. V., E-mail: v-samedov@yandex.ru. Thu . "Dependence of energy resolution of a plane-parallel HPGe detector on bias voltage upon registration of low-energy X-rays". United States. https://doi.org/10.1134/S1063778816090106.
@article{osti_22614031,
title = {Dependence of energy resolution of a plane-parallel HPGe detector on bias voltage upon registration of low-energy X-rays},
author = {Samedov, V. V., E-mail: v-samedov@yandex.ru},
abstractNote = {In this study, we theoretically analyze the processes in a plane-parallel high-purity germanium (HPGe) detector. The generating function of factorial moments describing the process of registration of low-energy X-rays by the HPGe detector with consideration of capture of charge carriers by traps is obtained. It is demonstrated that the coefficients of expansion of the average signal amplitude and variance in power series over the quantity inversely proportional to the bias voltage of the detector allow one to determine the Fano factor, the product of the charge carrier lifetime and mobility, and other characteristics of the semiconductor material of the detector.},
doi = {10.1134/S1063778816090106},
url = {https://www.osti.gov/biblio/22614031}, journal = {Physics of Atomic Nuclei},
issn = {1063-7788},
number = 9-10,
volume = 79,
place = {United States},
year = {2016},
month = {12}
}