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Title: Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition

Abstract

In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.

Authors:
; ; ; ; ;  [1]
  1. Convergence Center for Advanced Nano Semiconductor (CANS), Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22611671
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CATALYSTS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEFECTS; ELECTRON DIFFRACTION; EPITAXY; GALLIUM NITRIDES; LAYERS; METALS; NANOSTRUCTURES; ORGANOMETALLIC COMPOUNDS; RESOLUTION; SAPPHIRE; STACKING FAULTS; SUBSTRATES; THIN FILMS; TRANSMISSION; TRANSMISSION ELECTRON MICROSCOPY; X-RAY DIFFRACTION

Citation Formats

Lee, Kyuseung, Chae, Sooryong, Jang, Jongjin, Min, Daehong, Kim, Jaehwan, and Nam, Okhyun, E-mail: ohnam@kpu.ac.kr. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition. United States: N. p., 2016. Web. doi:10.1063/1.4947193.
Lee, Kyuseung, Chae, Sooryong, Jang, Jongjin, Min, Daehong, Kim, Jaehwan, & Nam, Okhyun, E-mail: ohnam@kpu.ac.kr. Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition. United States. doi:10.1063/1.4947193.
Lee, Kyuseung, Chae, Sooryong, Jang, Jongjin, Min, Daehong, Kim, Jaehwan, and Nam, Okhyun, E-mail: ohnam@kpu.ac.kr. Fri . "Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition". United States. doi:10.1063/1.4947193.
@article{osti_22611671,
title = {Self-assembled growth and structural analysis of inclined GaN nanorods on nanoimprinted m-sapphire using catalyst-free metal-organic chemical vapor deposition},
author = {Lee, Kyuseung and Chae, Sooryong and Jang, Jongjin and Min, Daehong and Kim, Jaehwan and Nam, Okhyun, E-mail: ohnam@kpu.ac.kr},
abstractNote = {In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclined angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.},
doi = {10.1063/1.4947193},
journal = {AIP Advances},
number = 4,
volume = 6,
place = {United States},
year = {Fri Apr 15 00:00:00 EDT 2016},
month = {Fri Apr 15 00:00:00 EDT 2016}
}