Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

Journal Article · Fri Apr 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4945788· OSTI ID:22611638

Göckeritz, Robert; Homonnay, Nico; Müller, Alexander ^[1]; Fuhrmann, Bodo ^[2]; Schmidt, Georg ^[1]

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1. Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany)
2. Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, 06099 Halle (Saale) (Germany)

Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

• OSTI ID: 22611638
• Journal Information: AIP Advances, Vol. 6, Issue 4; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPLEXES
CHARGE CARRIERS
COBALT
FERROELECTRIC MATERIALS
LANTHANUM COMPOUNDS
LAYERS
MAGNETIC PROPERTIES
MAGNETORESISTANCE
MANGANATES
MODIFICATIONS
MODULATION
NANOSTRUCTURES
SIMULATION
SPIN
STRONTIUM COMPOUNDS
SURFACES
TUNNEL EFFECT
TUNNEL JUNCTIONS
VALVES