A comparative study on charge carrier recombination across the junction region of Cu{sub 2}ZnSn(S,Se){sub 4} and Cu(In,Ga)Se{sub 2} thin film solar cells

Journal Article · Tue Mar 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4944911· OSTI ID:22611621

Islam, Muhammad Monirul; Luo, Xianjia; Sakurai, Takeaki; Akimoto, Katsuhiro ^[1]; Sakai, Noriyuki; Kato, Takuya; Sugimoto, Hiroki ^[2]; Tampo, Hitoshi; Shibata, Hajime; Niki, Shigeru ^[3]

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1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
2. Energy Solution Business Center, Showa Shell Sekiyu K.K., Minato, Tokyo 135-8074 (Japan)
3. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

A comparative study with focusing on carrier recombination properties in Cu{sub 2}ZnSn(S,Se){sub 4} (CZTSSe) and the CuInGaSe{sub 2} (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent V{sub OC} suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

• OSTI ID: 22611621
• Journal Information: AIP Advances, Vol. 6, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIERS
CHARGE CARRIERS
COMPARATIVE EVALUATIONS
CURRENT DENSITY
ELECTRIC CONTACTS
ELECTRIC FIELDS
ELECTROLUMINESCENCE
INTERFACES
PHOTOLUMINESCENCE
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
TEMPERATURE DEPENDENCE
THIN FILMS
TIME RESOLUTION