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Title: A comprehensive simulation model of the performance of photochromic films in absorbance-modulation-optical-lithography

Abstract

Optical lithography is the most prevalent method of fabricating micro-and nano-scale structures in the semiconductor industry due to the fact that patterning using photons is fast, accurate and provides high throughput. However, the resolution of this technique is inherently limited by the physical phenomenon of diffraction. Absorbance-Modulation-Optical Lithography (AMOL), a recently developed technique has been successfully demonstrated to be able to circumvent this diffraction limit. AMOL employs a dual-wavelength exposure system in conjunction with spectrally selective reversible photo-transitions in thin films of photochromic molecules to achieve patterning of features with sizes beyond the far-field diffraction limit. We have developed a finite-element-method based full-electromagnetic-wave solution model that simulates the photo-chemical processes that occur within the thin film of the photochromic molecules under illumination by the exposure and confining wavelengths in AMOL. This model allows us to understand how the material characteristics influence the confinement to sub-diffraction dimensions, of the transmitted point spread function (PSF) of the exposure wavelength inside the recording medium. The model reported here provides the most comprehensive analysis of the AMOL process to-date, and the results show that the most important factors that govern the process, are the polarization of the two beams, the ratio of the intensitiesmore » of the two wavelengths, the relative absorption coefficients and the concentration of the photochromic species, the thickness of the photochromic layer and the quantum yields of the photoreactions at the two wavelengths. The aim of this work is to elucidate the requirements of AMOL in successfully circumventing the far-field diffraction limit.« less

Authors:
; ;  [1];  [2]
  1. Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112 (United States)
  2. Department of Chemistry, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
Publication Date:
OSTI Identifier:
22611617
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ABUNDANCE; BEAMS; CONCENTRATION RATIO; CONFINEMENT; DIFFRACTION; ELECTROMAGNETIC RADIATION; FINITE ELEMENT METHOD; ILLUMINANCE; LAYERS; MODULATION; MOLECULES; PHOTONS; POLARIZATION; RESOLUTION; SEMICONDUCTOR MATERIALS; SIMULATION; THIN FILMS; WAVELENGTHS

Citation Formats

Majumder, Apratim, Helms, Phillip L., Menon, Rajesh, E-mail: rmenon@eng.utah.edu, and Andrew, Trisha L. A comprehensive simulation model of the performance of photochromic films in absorbance-modulation-optical-lithography. United States: N. p., 2016. Web. doi:10.1063/1.4944489.
Majumder, Apratim, Helms, Phillip L., Menon, Rajesh, E-mail: rmenon@eng.utah.edu, & Andrew, Trisha L. A comprehensive simulation model of the performance of photochromic films in absorbance-modulation-optical-lithography. United States. doi:10.1063/1.4944489.
Majumder, Apratim, Helms, Phillip L., Menon, Rajesh, E-mail: rmenon@eng.utah.edu, and Andrew, Trisha L. Tue . "A comprehensive simulation model of the performance of photochromic films in absorbance-modulation-optical-lithography". United States. doi:10.1063/1.4944489.
@article{osti_22611617,
title = {A comprehensive simulation model of the performance of photochromic films in absorbance-modulation-optical-lithography},
author = {Majumder, Apratim and Helms, Phillip L. and Menon, Rajesh, E-mail: rmenon@eng.utah.edu and Andrew, Trisha L.},
abstractNote = {Optical lithography is the most prevalent method of fabricating micro-and nano-scale structures in the semiconductor industry due to the fact that patterning using photons is fast, accurate and provides high throughput. However, the resolution of this technique is inherently limited by the physical phenomenon of diffraction. Absorbance-Modulation-Optical Lithography (AMOL), a recently developed technique has been successfully demonstrated to be able to circumvent this diffraction limit. AMOL employs a dual-wavelength exposure system in conjunction with spectrally selective reversible photo-transitions in thin films of photochromic molecules to achieve patterning of features with sizes beyond the far-field diffraction limit. We have developed a finite-element-method based full-electromagnetic-wave solution model that simulates the photo-chemical processes that occur within the thin film of the photochromic molecules under illumination by the exposure and confining wavelengths in AMOL. This model allows us to understand how the material characteristics influence the confinement to sub-diffraction dimensions, of the transmitted point spread function (PSF) of the exposure wavelength inside the recording medium. The model reported here provides the most comprehensive analysis of the AMOL process to-date, and the results show that the most important factors that govern the process, are the polarization of the two beams, the ratio of the intensities of the two wavelengths, the relative absorption coefficients and the concentration of the photochromic species, the thickness of the photochromic layer and the quantum yields of the photoreactions at the two wavelengths. The aim of this work is to elucidate the requirements of AMOL in successfully circumventing the far-field diffraction limit.},
doi = {10.1063/1.4944489},
journal = {AIP Advances},
number = 3,
volume = 6,
place = {United States},
year = {Tue Mar 15 00:00:00 EDT 2016},
month = {Tue Mar 15 00:00:00 EDT 2016}
}