Strain engineering band gap, effective mass and anisotropic Dirac-like cone in monolayer arsenene

Journal Article · Tue Mar 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4943548· OSTI ID:22611611

Wang, Can ^[1]; Xia, Qinglin; Nie, Yaozhuang; Rahman, Mavlanjan; Guo, Guanghua ^[1]

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1. School of Physics and Electronics, Central South University, Changsha 410083 (China)

The electronic properties of two-dimensional puckered arsenene have been investigated using first-principles calculations. The effective mass of electrons exhibits highly anisotropic dispersion in intrinsic puckered arsenene. Futhermore, we find that out-of-plane strain is effective in tuning the band gap, as the material undergoes the transition into a metal from an indirect gap semiconductor. Remarkably, we observe the emergence of Dirac-like cone with in-plane strain. Strain modulates not only the band gap of monolayer arsenene, but also the effective mass. Our results present possibilities for engineering the electronic properties of two-dimensional puckered arsenene and pave a way for tuning carrier mobility of future electronic devices.

• OSTI ID: 22611611
• Journal Information: AIP Advances, Vol. 6, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANISOTROPY
ARSENIC
CARRIER MOBILITY
CONES
DISPERSIONS
EFFECTIVE MASS
ELECTRONIC EQUIPMENT
ELECTRONS
METALS
NANOSTRUCTURES
SEMICONDUCTOR MATERIALS
STRAINS
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS