Correlation between surface modification and photoluminescence properties of β-Ga{sub 2}O{sub 3} nanostructures
- Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore -452 013 (M.P) (India)
- Semiconductor Physics & Devices Lab, Raja Ramanna Centre for Advanced Technology, Indore -452 013 (M.P) (India)
- Laser materials Development & Devices Division, Raja Ramanna Centre for Advanced Technology, Indore -452 013 (M.P) (India)
In this work three different growth methods have been used to grow β-Ga{sub 2}O{sub 3} nanostructures. The nanostructures were characterized by Grazing Incident X-Ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy and Photoluminescence Spectroscopy. Photoluminescence spectra for all the samples of β-Ga{sub 2}O{sub 3} nanostructures exhibit an UV and blue emission band. The relative intensity of UV and blue luminescence is strongly affected by the surface defects present on the nanostructures. Our study shows that Photoluminescence intensity of UV and blue luminescence can be reliably used to determine the quality of β-Ga{sub 2}O{sub 3} nanostructures. Further the work opens up the possibility of using UV excitation and subsequent Photoluminescence analysis as a possible means for oxygen sensing. The Photoluminescence mechanism in β-Ga{sub 2}O{sub 3} nanostructures is also discussed.
- OSTI ID:
- 22611601
- Journal Information:
- AIP Advances, Vol. 6, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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