Electrical degradation of double-Schottky barrier in ZnO varistors
- The State Key Lab of Power System, Department of Electrical Engineering, Tsinghua University, Beijing 100084 (China)
Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.
- OSTI ID:
- 22611576
- Journal Information:
- AIP Advances, Vol. 6, Issue 3; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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