Tuning the electronic properties at the surface of BaBiO{sub 3} thin films

Journal Article · Wed Jun 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4954037· OSTI ID:22611567

Ferreyra, C. ^[1]; Guller, F.; Llois, A. M.; Vildosola, V. ^[1]; Marchini, F.; Williams, F. J. ^[2]; Lüders, U. ^[3]; Albornoz, C. ^[1]; Leyva, A. G. ^[1]; others, and

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1. GIyA y INN, CNEA, Av.Gral Paz 1499, (1650), San Martín, Buenos Aires (Argentina)
2. Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina)
3. CRISMAT, CNRS UMR 6508, ENSICAEN, 6 Boulevard Maréchal Juin, 14050 Caen Cedex 4 (France)

The presence of 2D electron gases at surfaces or interfaces in oxide thin films remains a hot topic in condensed matter physics. In particular, BaBiO{sub 3} appears as a very interesting system as it was theoretically proposed that its (001) surface should become metallic if a Bi-termination is achieved (Vildosola et al., PRL 110, 206805 (2013)). Here we report on the preparation by pulsed laser deposition and characterization of BaBiO{sub 3} thin films on silicon. We show that the texture of the films can be tuned by controlling the growth conditions, being possible to stabilize strongly (100)-textured films. We find significant differences on the spectroscopic and transport properties between (100)-textured and non-textured films. We rationalize these experimental results by performing first principles calculations, which indicate the existence of electron doping at the (100) surface. This stabilizes Bi ions in a 3+ state, shortens Bi-O bonds and reduces the electronic band gap, increasing the surface conductivity. Our results emphasize the importance of surface effects on the electronic properties of perovskites, and provide strategies to design novel oxide heterostructures with potential interface-related 2D electron gases.

• OSTI ID: 22611567
• Journal Information: AIP Advances, Vol. 6, Issue 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BARIUM COMPOUNDS
BISMUTH COMPOUNDS
DESIGN
ELECTRICAL PROPERTIES
ENERGY BEAM DEPOSITION
GASES
INTERFACES
LASER RADIATION
OXIDES
OXYGEN COMPOUNDS
PEROVSKITES
PULSED IRRADIATION
PULSES
SILICON
SURFACE PROPERTIES
SURFACES
THIN FILMS