Improvement of electron mobility in La:BaSnO{sub 3} thin films by insertion of an atomically flat insulating (Sr,Ba)SnO{sub 3} buffer layer

Journal Article · Wed Jun 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4953808· OSTI ID:22611563

Shiogai, Junichi; Nishihara, Kazuki; Sato, Kazuhisa ^[1]; Tsukazaki, Atsushi ^[1]

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1. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

One perovskite oxide, ASnO{sub 3} (A = Sr, Ba), is a candidate for use as a transparent conductive oxide with high electron mobility in single crystalline form. However, the electron mobility of films grown on SrTiO{sub 3} substrates does not reach the bulk value, probably because of dislocation scattering that originates from the large lattice mismatch. This study investigates the effect of insertion of bilayer BaSnO{sub 3} / (Sr,Ba)SnO{sub 3} for buffering this large lattice mismatch between La:BaSnO{sub 3} and SrTiO{sub 3} substrate. The insertion of 200-nm-thick BaSnO{sub 3} on (Sr,Ba)SnO{sub 3} bilayer buffer structures reduces the number of dislocations and improves surface smoothness of the films after annealing as proved respectively by scanning transmission electron microscopy and atomic force microscopy. A systematic investigation of BaSnO{sub 3} buffer layer thickness dependence on Hall mobility of the electron transport in La:BaSnO{sub 3} shows that the highest obtained value of mobility is 78 cm{sup 2}V{sup −1}s{sup −1} because of its fewer dislocations. High electron mobility films based on perovskite BaSnO{sub 3} can provide a good platform for transparent-conducting-oxide electronic devices and for creation of fascinating perovskite heterostructures.

• OSTI ID: 22611563
• Journal Information: AIP Advances, Vol. 6, Issue 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ATOMIC FORCE MICROSCOPY
BARIUM COMPOUNDS
BUFFERS
DISLOCATIONS
ELECTRIC CONDUCTIVITY
ELECTRON MOBILITY
LANTHANUM ADDITIONS
LAYERS
MONOCRYSTALS
OXIDES
PEROVSKITE
STRONTIUM COMPOUNDS
STRONTIUM TITANATES
SUBSTRATES
THICKNESS
THIN FILMS
TIN OXIDES
TRANSMISSION ELECTRON MICROSCOPY