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Title: Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells

Abstract

Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedance spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 {sup o}C, providing indirect evidence of the performance of solar cells at elevated temperatures.

Authors:
; ; ;  [1];  [2];  [1];  [3]
  1. School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad, 44000 (Pakistan)
  2. College of Aeronautical Engineering, National University of Sciences and Technology, Islamabad, 44000 (Pakistan)
  3. (Saudi Arabia)
Publication Date:
OSTI Identifier:
22611561
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMMERCIALIZATION; EFFICIENCY; ELECTRON MOBILITY; ELECTRONS; HOLES; IMPEDANCE; INCLUSIONS; LAYERS; LEAD COMPOUNDS; ORGANIC IODINE COMPOUNDS; PEROVSKITE; RECOMBINATION; SOLAR CELLS; SPECTRA; SPECTROSCOPY; SYNTHESIS; ZINC OXIDES

Citation Formats

Ahmed, Muhammad Imran, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk, Hussain, Zakir, Mujahid, Mohammad, Khan, Ahmed Nawaz, Javaid, Syed Saad, Habib, Amir, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk, and The Department of Physics, College of Sciences, University of Hafar Al Batin, P.O. Box 1803, Hafar Al Batin 31991 Saudi Arabia. Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells. United States: N. p., 2016. Web. doi:10.1063/1.4953397.
Ahmed, Muhammad Imran, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk, Hussain, Zakir, Mujahid, Mohammad, Khan, Ahmed Nawaz, Javaid, Syed Saad, Habib, Amir, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk, & The Department of Physics, College of Sciences, University of Hafar Al Batin, P.O. Box 1803, Hafar Al Batin 31991 Saudi Arabia. Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells. United States. doi:10.1063/1.4953397.
Ahmed, Muhammad Imran, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk, Hussain, Zakir, Mujahid, Mohammad, Khan, Ahmed Nawaz, Javaid, Syed Saad, Habib, Amir, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk, and The Department of Physics, College of Sciences, University of Hafar Al Batin, P.O. Box 1803, Hafar Al Batin 31991 Saudi Arabia. Wed . "Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells". United States. doi:10.1063/1.4953397.
@article{osti_22611561,
title = {Low resistivity ZnO-GO electron transport layer based CH{sub 3}NH{sub 3}PbI{sub 3} solar cells},
author = {Ahmed, Muhammad Imran, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk and Hussain, Zakir and Mujahid, Mohammad and Khan, Ahmed Nawaz and Javaid, Syed Saad and Habib, Amir, E-mail: imranrahbar@scme.nust.edu.pk, E-mail: amirhabib@scme.nust.edu.pk and The Department of Physics, College of Sciences, University of Hafar Al Batin, P.O. Box 1803, Hafar Al Batin 31991 Saudi Arabia},
abstractNote = {Perovskite based solar cells have demonstrated impressive performances. Controlled environment synthesis and expensive hole transport material impede their potential commercialization. We report ambient air synthesis of hole transport layer free devices using ZnO-GO as electron selective contacts. Solar cells fabricated with hole transport layer free architecture under ambient air conditions with ZnO as electron selective contact achieved an efficiency of 3.02%. We have demonstrated that by incorporating GO in ZnO matrix, low resistivity electron selective contacts, critical to improve the performance, can be achieved. We could achieve max efficiency of 4.52% with our completed devices for ZnO: GO composite. Impedance spectroscopy confirmed the decrease in series resistance and an increase in recombination resistance with inclusion of GO in ZnO matrix. Effect of temperature on completed devices was investigated by recording impedance spectra at 40 and 60 {sup o}C, providing indirect evidence of the performance of solar cells at elevated temperatures.},
doi = {10.1063/1.4953397},
journal = {AIP Advances},
number = 6,
volume = 6,
place = {United States},
year = {Wed Jun 15 00:00:00 EDT 2016},
month = {Wed Jun 15 00:00:00 EDT 2016}
}