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Title: High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition

Abstract

High-resistive layers were obtained by periodic growth and in situ annealing of InGaN. The effect of the annealing temperature of InGaN on the indium content and the material sheet resistive was investigated. The indium content decreased as the increase of in situ annealing temperature. Additionally, the material sheet resistance increased with the increase of the in situ annealing temperature for the annealed samples and reached 2 × 10{sup 10}Ω/sq in the light and 2 × 10{sup 11}Ω/sq in the dark when the in situ annealing temperature reached 970{sup ∘}C. The acquirement of high-resistive layers is attributed to the generation of indium vacancy-related defects. Introducing indium vacancy-related defects to compensate background carriers can be an effective method to grow high-resistance material.

Authors:
; ; ; ;  [1];  [2];  [3]
  1. Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
  2. Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application, Beijing 100083 (China)
  3. State Key Laboratory of Solid State Lighting, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22611560
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CARRIERS; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEFECTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LAYERS; NITROGEN COMPOUNDS; PERIODICITY; TERNARY ALLOY SYSTEMS; VACANCIES; VAPORS; VISIBLE RADIATION

Citation Formats

Zhang, Shuo, Ma, Ping, E-mail: maping@semi.ac.cn, Liu, Boting, Wu, Dongxue, Li, Jinmin, Huang, Yuliang, and Wang, Junxi. High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition. United States: N. p., 2016. Web. doi:10.1063/1.4953329.
Zhang, Shuo, Ma, Ping, E-mail: maping@semi.ac.cn, Liu, Boting, Wu, Dongxue, Li, Jinmin, Huang, Yuliang, & Wang, Junxi. High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition. United States. doi:10.1063/1.4953329.
Zhang, Shuo, Ma, Ping, E-mail: maping@semi.ac.cn, Liu, Boting, Wu, Dongxue, Li, Jinmin, Huang, Yuliang, and Wang, Junxi. 2016. "High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition". United States. doi:10.1063/1.4953329.
@article{osti_22611560,
title = {High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition},
author = {Zhang, Shuo and Ma, Ping, E-mail: maping@semi.ac.cn and Liu, Boting and Wu, Dongxue and Li, Jinmin and Huang, Yuliang and Wang, Junxi},
abstractNote = {High-resistive layers were obtained by periodic growth and in situ annealing of InGaN. The effect of the annealing temperature of InGaN on the indium content and the material sheet resistive was investigated. The indium content decreased as the increase of in situ annealing temperature. Additionally, the material sheet resistance increased with the increase of the in situ annealing temperature for the annealed samples and reached 2 × 10{sup 10}Ω/sq in the light and 2 × 10{sup 11}Ω/sq in the dark when the in situ annealing temperature reached 970{sup ∘}C. The acquirement of high-resistive layers is attributed to the generation of indium vacancy-related defects. Introducing indium vacancy-related defects to compensate background carriers can be an effective method to grow high-resistance material.},
doi = {10.1063/1.4953329},
journal = {AIP Advances},
number = 6,
volume = 6,
place = {United States},
year = 2016,
month = 6
}
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