Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

Journal Article · Wed Jun 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4954880· OSTI ID:22611559

Wang, Ziwei; Xiao, Lei; Liang, Renrong; Shen, Shanshan; Xu, Jun; Wang, Jing ^[1]

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1. Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

• OSTI ID: 22611559
• Journal Information: AIP Advances, Vol. 6, Issue 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
DEPOSITION
DIELECTRIC MATERIALS
GADOLINIUM OXIDES
GRAIN ORIENTATION
LATTICE PARAMETERS
LAYERS
LEAKAGE CURRENT
LEAKS
MAGNETRONS
MONOCRYSTALS
NEODYMIUM OXIDES
PERMITTIVITY
RARE EARTHS
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0400-1000 K
THIN FILMS