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Title: Nano-crystallization in ZnO-doped In{sub 2}O{sub 3} thin films via excimer laser annealing for thin-film transistors

Abstract

In a previous work, we reported the high field effect mobility of ZnO-doped In{sub 2}O{sub 3} (IZO) thin film transistors (TFTs) irradiated by excimer laser annealing (ELA) [M. Fujii et al., Appl. Phys. Lett. 102, 122107 (2013)]. However, a deeper understanding of the effect of ELA on the IZO film characteristics based on crystallinity, carrier concentrations, and optical properties is needed to control localized carrier concentrations for fabricating self-aligned structures in the same oxide film and to adequately explain the physical characteristics. In the case of as-deposited IZO film used as the channel, a high carrier concentration due to a high density of oxygen vacancies was observed; such a film does not show the required TFT characteristics but can act as a conductive film. We achieved a decrease in the carrier concentration of IZO films by crystallization using ELA. This means that ELA can form localized conductive or semi-conductive areas on the IZO film. We confirmed that the reason for the carrier concentration decrease was the decrease of oxygen-deficient regions and film crystallization. The annealed IZO films showed nano-crystalline phase, and the temperature at the substrate was substantially less than the temperature limit for flexible films such as plastic, whichmore » is 50°C. This paves the way for the formation of self-aligned structures and separately formed conductive and semi-conductive regions in the same oxide film.« less

Authors:
; ; ;  [1]; ; ;  [2]; ; ;  [3]
  1. Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan)
  2. Delft University of Technology, Feldmannweg 17, P.O. Box 5053, 2600 GB Delft (Netherlands)
  3. Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, Chiba, 299-0293 (Japan)
Publication Date:
OSTI Identifier:
22611555
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CARRIERS; CONCENTRATION RATIO; CRYSTALLIZATION; DENSITY; DOPED MATERIALS; EXCIMER LASERS; INDIUM OXIDES; IRRADIATION; MOBILITY; NANOSTRUCTURES; OPTICAL PROPERTIES; OXYGEN; PLASTICS; SUBSTRATES; THIN FILMS; TRANSISTORS; ZINC OXIDES

Citation Formats

Fujii, Mami N., E-mail: f-mami@ms.naist.jp, Ishikawa, Yasuaki, Bermundo, Juan Paolo Soria, Uraoka, Yukiharu, Ishihara, Ryoichi, Cingel, Johan van der, Mofrad, Mohammad R. T., Kawashima, Emi, Tomai, Shigekazu, and Yano, Koki. Nano-crystallization in ZnO-doped In{sub 2}O{sub 3} thin films via excimer laser annealing for thin-film transistors. United States: N. p., 2016. Web. doi:10.1063/1.4954666.
Fujii, Mami N., E-mail: f-mami@ms.naist.jp, Ishikawa, Yasuaki, Bermundo, Juan Paolo Soria, Uraoka, Yukiharu, Ishihara, Ryoichi, Cingel, Johan van der, Mofrad, Mohammad R. T., Kawashima, Emi, Tomai, Shigekazu, & Yano, Koki. Nano-crystallization in ZnO-doped In{sub 2}O{sub 3} thin films via excimer laser annealing for thin-film transistors. United States. doi:10.1063/1.4954666.
Fujii, Mami N., E-mail: f-mami@ms.naist.jp, Ishikawa, Yasuaki, Bermundo, Juan Paolo Soria, Uraoka, Yukiharu, Ishihara, Ryoichi, Cingel, Johan van der, Mofrad, Mohammad R. T., Kawashima, Emi, Tomai, Shigekazu, and Yano, Koki. Wed . "Nano-crystallization in ZnO-doped In{sub 2}O{sub 3} thin films via excimer laser annealing for thin-film transistors". United States. doi:10.1063/1.4954666.
@article{osti_22611555,
title = {Nano-crystallization in ZnO-doped In{sub 2}O{sub 3} thin films via excimer laser annealing for thin-film transistors},
author = {Fujii, Mami N., E-mail: f-mami@ms.naist.jp and Ishikawa, Yasuaki and Bermundo, Juan Paolo Soria and Uraoka, Yukiharu and Ishihara, Ryoichi and Cingel, Johan van der and Mofrad, Mohammad R. T. and Kawashima, Emi and Tomai, Shigekazu and Yano, Koki},
abstractNote = {In a previous work, we reported the high field effect mobility of ZnO-doped In{sub 2}O{sub 3} (IZO) thin film transistors (TFTs) irradiated by excimer laser annealing (ELA) [M. Fujii et al., Appl. Phys. Lett. 102, 122107 (2013)]. However, a deeper understanding of the effect of ELA on the IZO film characteristics based on crystallinity, carrier concentrations, and optical properties is needed to control localized carrier concentrations for fabricating self-aligned structures in the same oxide film and to adequately explain the physical characteristics. In the case of as-deposited IZO film used as the channel, a high carrier concentration due to a high density of oxygen vacancies was observed; such a film does not show the required TFT characteristics but can act as a conductive film. We achieved a decrease in the carrier concentration of IZO films by crystallization using ELA. This means that ELA can form localized conductive or semi-conductive areas on the IZO film. We confirmed that the reason for the carrier concentration decrease was the decrease of oxygen-deficient regions and film crystallization. The annealed IZO films showed nano-crystalline phase, and the temperature at the substrate was substantially less than the temperature limit for flexible films such as plastic, which is 50°C. This paves the way for the formation of self-aligned structures and separately formed conductive and semi-conductive regions in the same oxide film.},
doi = {10.1063/1.4954666},
journal = {AIP Advances},
number = 6,
volume = 6,
place = {United States},
year = {Wed Jun 15 00:00:00 EDT 2016},
month = {Wed Jun 15 00:00:00 EDT 2016}
}