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Title: Optical transitions in GaNAs quantum wells with variable nitrogen content embedded in AlGaAs

Abstract

We investigate the optical transitions of GaN{sub x}As{sub 1−x} quantum wells (QWs) embedded in wider band gap AlGaAs. A combination of absorption and emission spectroscopic techniques is employed to systematically investigate the properties of GaNAs QWs with N concentrations ranging from 0 – 3%. From measurement of the photocurrent spectra, we find that besides QW ground state and first excited transition, distinct increases in photocurrent generation are observed. Their origin can be explained by N-induced modifications in the density of states at higher energies above the QW ground state. Photoluminescence experiments reveal that peak position dependence with temperature changes with N concentration. The characteristic S-shaped dependence for low N concentrations of 0.5% changes with increasing N concentration where the low temperature red-shift of the S-shape gradually disappears. This change indicates a gradual transition from impurity picture, where localized N induced energy states are present, to alloying picture, where an impurity-band is formed. In the highest-N sample, photoluminescence emission shows remarkable temperature stability. This phenomenon is explained by the interplay of N-induced energy states and QW confined states.

Authors:
 [1];  [2]; ;  [3]
  1. International Center for Young Scientists, National Institute for Materials Science, 305-0047 Tsukuba (Japan)
  2. Photovoltaic Materials Unit, National Institute for Materials Science, 305-0047 Tsukuba (Japan)
  3. Photonic Materials Unit, National Institute for Materials Science, 305-0047 Tsukuba (Japan)
Publication Date:
OSTI Identifier:
22611548
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ALUMINIUM ARSENIDES; CONCENTRATION RATIO; DENSITY OF STATES; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; GALLIUM NITRIDES; GROUND STATES; IMPURITIES; MODIFICATIONS; NITROGEN ADDITIONS; PHOTOCURRENTS; PHOTOLUMINESCENCE; QUANTUM WELLS; RED SHIFT; SPACE DEPENDENCE; SPECTRA; STABILITY; TERNARY ALLOY SYSTEMS; X-RAY SPECTROSCOPY

Citation Formats

Elborg, M., E-mail: ELBORG.Martin@nims.go.jp, Noda, T., Mano, T., and Sakuma, Y. Optical transitions in GaNAs quantum wells with variable nitrogen content embedded in AlGaAs. United States: N. p., 2016. Web. doi:10.1063/1.4953894.
Elborg, M., E-mail: ELBORG.Martin@nims.go.jp, Noda, T., Mano, T., & Sakuma, Y. Optical transitions in GaNAs quantum wells with variable nitrogen content embedded in AlGaAs. United States. doi:10.1063/1.4953894.
Elborg, M., E-mail: ELBORG.Martin@nims.go.jp, Noda, T., Mano, T., and Sakuma, Y. Wed . "Optical transitions in GaNAs quantum wells with variable nitrogen content embedded in AlGaAs". United States. doi:10.1063/1.4953894.
@article{osti_22611548,
title = {Optical transitions in GaNAs quantum wells with variable nitrogen content embedded in AlGaAs},
author = {Elborg, M., E-mail: ELBORG.Martin@nims.go.jp and Noda, T. and Mano, T. and Sakuma, Y.},
abstractNote = {We investigate the optical transitions of GaN{sub x}As{sub 1−x} quantum wells (QWs) embedded in wider band gap AlGaAs. A combination of absorption and emission spectroscopic techniques is employed to systematically investigate the properties of GaNAs QWs with N concentrations ranging from 0 – 3%. From measurement of the photocurrent spectra, we find that besides QW ground state and first excited transition, distinct increases in photocurrent generation are observed. Their origin can be explained by N-induced modifications in the density of states at higher energies above the QW ground state. Photoluminescence experiments reveal that peak position dependence with temperature changes with N concentration. The characteristic S-shaped dependence for low N concentrations of 0.5% changes with increasing N concentration where the low temperature red-shift of the S-shape gradually disappears. This change indicates a gradual transition from impurity picture, where localized N induced energy states are present, to alloying picture, where an impurity-band is formed. In the highest-N sample, photoluminescence emission shows remarkable temperature stability. This phenomenon is explained by the interplay of N-induced energy states and QW confined states.},
doi = {10.1063/1.4953894},
journal = {AIP Advances},
number = 6,
volume = 6,
place = {United States},
year = {Wed Jun 15 00:00:00 EDT 2016},
month = {Wed Jun 15 00:00:00 EDT 2016}
}