skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrical characterization of MIM capacitor comprises an adamantane film at room temperature

Abstract

We fabricated a new metal-insulator-metal capacitor at room temperature, comprising a ∼90 nm thin low–k adamantane film on a Si substrate. The surface morphology of deposited organic film was investigated by using scanning electron microscopy and Raman spectroscopy, which is confirmed that the adamantane thin film was uniformly distributed on the Si surface. The adamantane film exhibits a low leakage current density of 7.4 x 10{sup −7} A/cm{sup 2} at 13.5 V, better capacitance density of 2.14 fF/μm{sup 2} at 100 KHz.

Authors:
 [1];  [2];  [1]
  1. Department of Physics and Astronomical Sciences, Central University of Himachal Pradesh, Dharmshala 176206 Kangra, H.P. India (India)
  2. (Japan)
Publication Date:
OSTI Identifier:
22611540
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITANCE; CAPACITORS; CURRENT DENSITY; CYCLOALKANES; DIELECTRIC MATERIALS; LEAKAGE CURRENT; METALS; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS

Citation Formats

Tiwari, Rajanish N., E-mail: rajanisht@gmail.com, Toyota Technological Institute, 2-12-1Hisakata, Tempaku-Ku, Nagoya 468-8511, and Yoshimura, Masamichi. Electrical characterization of MIM capacitor comprises an adamantane film at room temperature. United States: N. p., 2016. Web. doi:10.1063/1.4954807.
Tiwari, Rajanish N., E-mail: rajanisht@gmail.com, Toyota Technological Institute, 2-12-1Hisakata, Tempaku-Ku, Nagoya 468-8511, & Yoshimura, Masamichi. Electrical characterization of MIM capacitor comprises an adamantane film at room temperature. United States. doi:10.1063/1.4954807.
Tiwari, Rajanish N., E-mail: rajanisht@gmail.com, Toyota Technological Institute, 2-12-1Hisakata, Tempaku-Ku, Nagoya 468-8511, and Yoshimura, Masamichi. Wed . "Electrical characterization of MIM capacitor comprises an adamantane film at room temperature". United States. doi:10.1063/1.4954807.
@article{osti_22611540,
title = {Electrical characterization of MIM capacitor comprises an adamantane film at room temperature},
author = {Tiwari, Rajanish N., E-mail: rajanisht@gmail.com and Toyota Technological Institute, 2-12-1Hisakata, Tempaku-Ku, Nagoya 468-8511 and Yoshimura, Masamichi},
abstractNote = {We fabricated a new metal-insulator-metal capacitor at room temperature, comprising a ∼90 nm thin low–k adamantane film on a Si substrate. The surface morphology of deposited organic film was investigated by using scanning electron microscopy and Raman spectroscopy, which is confirmed that the adamantane thin film was uniformly distributed on the Si surface. The adamantane film exhibits a low leakage current density of 7.4 x 10{sup −7} A/cm{sup 2} at 13.5 V, better capacitance density of 2.14 fF/μm{sup 2} at 100 KHz.},
doi = {10.1063/1.4954807},
journal = {AIP Advances},
number = 6,
volume = 6,
place = {United States},
year = {Wed Jun 15 00:00:00 EDT 2016},
month = {Wed Jun 15 00:00:00 EDT 2016}
}