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Title: Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride

Abstract

The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.

Authors:
; ; ; ;  [1];  [2];  [1];  [3]
  1. Department of Mechanical Engineering, Stanford University, Stanford, California 94305 (United States)
  2. Manufacturing Technology Center, Samsung Electronics, Suwon, Gyeonggi-Do (Korea, Republic of)
  3. (United States)
Publication Date:
OSTI Identifier:
22611521
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHEMICAL VAPOR DEPOSITION; CORRELATIONS; DENSITY; DIELECTRIC MATERIALS; DILUTION; EVALUATION; FILMS; HYDROFLUORIC ACID; LAYERS; PLASMA; SILICON NITRIDES; SPACERS; TRANSISTORS

Citation Formats

Provine, J., E-mail: jprovine@stanford.edu, Schindler, Peter, Kim, Yongmin, Walch, Steve P., Kim, Hyo Jin, Kim, Ki-Hyun, Prinz, Fritz B., and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride. United States: N. p., 2016. Web. doi:10.1063/1.4954238.
Provine, J., E-mail: jprovine@stanford.edu, Schindler, Peter, Kim, Yongmin, Walch, Steve P., Kim, Hyo Jin, Kim, Ki-Hyun, Prinz, Fritz B., & Department of Materials Science and Engineering, Stanford University, Stanford, California 94305. Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride. United States. doi:10.1063/1.4954238.
Provine, J., E-mail: jprovine@stanford.edu, Schindler, Peter, Kim, Yongmin, Walch, Steve P., Kim, Hyo Jin, Kim, Ki-Hyun, Prinz, Fritz B., and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305. Wed . "Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride". United States. doi:10.1063/1.4954238.
@article{osti_22611521,
title = {Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride},
author = {Provine, J., E-mail: jprovine@stanford.edu and Schindler, Peter and Kim, Yongmin and Walch, Steve P. and Kim, Hyo Jin and Kim, Ki-Hyun and Prinz, Fritz B. and Department of Materials Science and Engineering, Stanford University, Stanford, California 94305},
abstractNote = {The continued scaling in transistors and memory elements has necessitated the development of atomic layer deposition (ALD) of silicon nitride (SiN{sub x}), particularly for use a low k dielectric spacer. One of the key material properties needed for SiN{sub x} films is a low wet etch rate (WER) in hydrofluoric (HF) acid. In this work, we report on the evaluation of multiple precursors for plasma enhanced atomic layer deposition (PEALD) of SiN{sub x} and evaluate the film’s WER in 100:1 dilutions of HF in H{sub 2}O. The remote plasma capability available in PEALD, enabled controlling the density of the SiN{sub x} film. Namely, prolonged plasma exposure made films denser which corresponded to lower WER in a systematic fashion. We determined that there is a strong correlation between WER and the density of the film that extends across multiple precursors, PEALD reactors, and a variety of process conditions. Limiting all steps in the deposition to a maximum temperature of 350 °C, it was shown to be possible to achieve a WER in PEALD SiN{sub x} of 6.1 Å/min, which is similar to WER of SiN{sub x} from LPCVD reactions at 850 °C.},
doi = {10.1063/1.4954238},
journal = {AIP Advances},
number = 6,
volume = 6,
place = {United States},
year = {Wed Jun 15 00:00:00 EDT 2016},
month = {Wed Jun 15 00:00:00 EDT 2016}
}