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Title: Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al{sub 2}O{sub 3} interlayer

Abstract

A thin Al{sub 2}O{sub 3} interlayer deposited between La{sub 2}O{sub 3} layer and Si substrate was used to scavenge the interfacial layer (IL) by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al{sub 2}O{sub 3} interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed.

Authors:
; ; ; ; ;  [1]
  1. Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071 (China)
Publication Date:
OSTI Identifier:
22611493
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 6; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CAPACITORS; CHANNELING; DIFFUSION; ELECTRICAL PROPERTIES; INTERFACES; LANTHANUM OXIDES; LAYERS; LEAKAGE CURRENT; SILICON; SUBSTRATES; THICKNESS; TRANSMISSION; TRANSMISSION ELECTRON MICROSCOPY; TRAPS

Citation Formats

Wang, Xing, Liu, Hongxia, E-mail: hxliu@mail.xidian.edu.cn, Fei, Chenxi, Zhao, Lu, Chen, Shupeng, and Wang, Shulong. Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al{sub 2}O{sub 3} interlayer. United States: N. p., 2016. Web. doi:10.1063/1.4955001.
Wang, Xing, Liu, Hongxia, E-mail: hxliu@mail.xidian.edu.cn, Fei, Chenxi, Zhao, Lu, Chen, Shupeng, & Wang, Shulong. Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al{sub 2}O{sub 3} interlayer. United States. doi:10.1063/1.4955001.
Wang, Xing, Liu, Hongxia, E-mail: hxliu@mail.xidian.edu.cn, Fei, Chenxi, Zhao, Lu, Chen, Shupeng, and Wang, Shulong. Wed . "Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al{sub 2}O{sub 3} interlayer". United States. doi:10.1063/1.4955001.
@article{osti_22611493,
title = {Electrical properties and interfacial issues of high-k/Si MIS capacitors characterized by the thickness of Al{sub 2}O{sub 3} interlayer},
author = {Wang, Xing and Liu, Hongxia, E-mail: hxliu@mail.xidian.edu.cn and Fei, Chenxi and Zhao, Lu and Chen, Shupeng and Wang, Shulong},
abstractNote = {A thin Al{sub 2}O{sub 3} interlayer deposited between La{sub 2}O{sub 3} layer and Si substrate was used to scavenge the interfacial layer (IL) by blocking the out-diffusion of substrate Si. Some advantages and disadvantages of this method were discussed in detail. Evident IL reduction corroborated by the transmission electron microscopy results suggested the feasibility of this method in IL scavenging. Significant improvements in oxygen vacancy and leakage current characteristics were achieved as the thickness of Al{sub 2}O{sub 3} interlayer increase. Meanwhile, some disadvantages such as the degradations in interface trap and oxide trapped charge characteristics were also observed.},
doi = {10.1063/1.4955001},
journal = {AIP Advances},
number = 6,
volume = 6,
place = {United States},
year = {Wed Jun 15 00:00:00 EDT 2016},
month = {Wed Jun 15 00:00:00 EDT 2016}
}