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Title: Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

Abstract

Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (∼28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.

Authors:
; ; ; ; ; ;  [1];  [2]
  1. National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)
  2. Jinan Jingzheng Electronics Co., Ltd., Jinan 250100 (China)
Publication Date:
OSTI Identifier:
22611456
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOMAIN STRUCTURE; ELECTRIC FIELDS; FERROELECTRIC MATERIALS; LITHIUM COMPOUNDS; MICROSCOPES; MODULATION; NIOBATES; OPTICAL MICROSCOPY; PIEZOELECTRICITY; RETENTION; STABILITY; THICKNESS; THIN FILMS

Citation Formats

Shao, Guang-hao, Bai, Yu-hang, Cui, Guo-xin, Li, Chen, Qiu, Xiang-biao, Wu, Di, Lu, Yan-qing, E-mail: yqlu@nju.edu.cn, and Geng, De-qiang. Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses. United States: N. p., 2016. Web. doi:10.1063/1.4959197.
Shao, Guang-hao, Bai, Yu-hang, Cui, Guo-xin, Li, Chen, Qiu, Xiang-biao, Wu, Di, Lu, Yan-qing, E-mail: yqlu@nju.edu.cn, & Geng, De-qiang. Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses. United States. doi:10.1063/1.4959197.
Shao, Guang-hao, Bai, Yu-hang, Cui, Guo-xin, Li, Chen, Qiu, Xiang-biao, Wu, Di, Lu, Yan-qing, E-mail: yqlu@nju.edu.cn, and Geng, De-qiang. Fri . "Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses". United States. doi:10.1063/1.4959197.
@article{osti_22611456,
title = {Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses},
author = {Shao, Guang-hao and Bai, Yu-hang and Cui, Guo-xin and Li, Chen and Qiu, Xiang-biao and Wu, Di and Lu, Yan-qing, E-mail: yqlu@nju.edu.cn and Geng, De-qiang},
abstractNote = {Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (∼28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.},
doi = {10.1063/1.4959197},
journal = {AIP Advances},
number = 7,
volume = 6,
place = {United States},
year = {Fri Jul 15 00:00:00 EDT 2016},
month = {Fri Jul 15 00:00:00 EDT 2016}
}