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Title: Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor

Abstract

We report the abnormal behavior of the threshold voltage (V{sub TH}) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V{sub TG}), while bottom gate bias (V{sub BG}) is less effect than V{sub TG}. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO{sub 2}/a-IGZO and also the existence of large amount of In{sup +} under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH{sup −} at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V{sub TG} both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.

Authors:
; ; ; ;  [1]
  1. Advanced Display Research Center and Department of Information Display, Kyung Hee University, Seoul 02447 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22611451
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; DIFFUSION; ELECTRIC POTENTIAL; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INDIUM IONS; INTERFACES; LAYERS; OXIDES; SILICON OXIDES; STRESSES; THIN FILMS; THRESHOLD CURRENT; TRANSISTORS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC COMPOUNDS; ZINC OXIDES

Citation Formats

Chun, Minkyu, Um, Jae Gwang, Park, Min Sang, Chowdhury, Md Delwar Hossain, and Jang, Jin, E-mail: jjang@khu.ac.kr. Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor. United States: N. p., 2016. Web. doi:10.1063/1.4960014.
Chun, Minkyu, Um, Jae Gwang, Park, Min Sang, Chowdhury, Md Delwar Hossain, & Jang, Jin, E-mail: jjang@khu.ac.kr. Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor. United States. doi:10.1063/1.4960014.
Chun, Minkyu, Um, Jae Gwang, Park, Min Sang, Chowdhury, Md Delwar Hossain, and Jang, Jin, E-mail: jjang@khu.ac.kr. Fri . "Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor". United States. doi:10.1063/1.4960014.
@article{osti_22611451,
title = {Effect of top gate potential on bias-stress for dual gate amorphous indium-gallium-zinc-oxide thin film transistor},
author = {Chun, Minkyu and Um, Jae Gwang and Park, Min Sang and Chowdhury, Md Delwar Hossain and Jang, Jin, E-mail: jjang@khu.ac.kr},
abstractNote = {We report the abnormal behavior of the threshold voltage (V{sub TH}) shift under positive bias Temperature stress (PBTS) and negative bias temperature stress (NBTS) at top/bottom gate in dual gate amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). It is found that the PBTS at top gate shows negative transfer shift and NBTS shows positive transfer shift for both top and bottom gate sweep. The shift of bottom/top gate sweep is dominated by top gate bias (V{sub TG}), while bottom gate bias (V{sub BG}) is less effect than V{sub TG}. The X-ray photoelectron spectroscopy (XPS) depth profile provides the evidence of In metal diffusion to the top SiO{sub 2}/a-IGZO and also the existence of large amount of In{sup +} under positive top gate bias around top interfaces, thus negative transfer shift is observed. On the other hand, the formation of OH{sup −} at top interfaces under the stress of negative top gate bias shows negative transfer shift. The domination of V{sub TG} both on bottom/top gate sweep after PBTS/NBTS is obviously occurred due to thin active layer.},
doi = {10.1063/1.4960014},
journal = {AIP Advances},
number = 7,
volume = 6,
place = {United States},
year = {Fri Jul 15 00:00:00 EDT 2016},
month = {Fri Jul 15 00:00:00 EDT 2016}
}