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Title: Characteristics of InGaAsBi with various lattice mismatches on InP substrate

Abstract

To develop bismuth-containing infrared optoelectronic devices, InGaAsBi/InP films with different lattice mismatches have been investigated. The lattice mismatch was tailored by changing the Bi content in conjunction with the In content simultaneously. X-ray diffraction analysis revealed that alloy lattice constants have been extended positively by incorporation of Bi into the crystal lattice. Electrical and optical characteristics were investigated by Hall-effect, optical absorption and photoluminescence measurements. A bandgap shrinking of about 56.4 meV/Bi% was deduced by X-ray diffraction and optical absorption measurements. From the excitation dependent photoluminescence measurement at 10 K, the donor-acceptor pair emissions were inferred for samples containing moderate and high levels of Bi. The temperature dependence of the PL peak energy is as small as 0.06 meV/K in In{sub 0.5}Ga{sub 0.5}As{sub 0.987}Bi{sub 0.013}, which is fairly low compared with that of In{sub 0.5}Ga{sub 0.5}As.

Authors:
; ; ; ; ; ; ;  [1]
  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
Publication Date:
OSTI Identifier:
22611449
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; ARSENIC COMPOUNDS; BISMUTH COMPOUNDS; COMPARATIVE EVALUATIONS; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTALS; EXCITATION; FILMS; GALLIUM COMPOUNDS; HALL EFFECT; INDIUM COMPOUNDS; INDIUM PHOSPHIDES; LATTICE PARAMETERS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; QUATERNARY ALLOY SYSTEMS; SUBSTRATES; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION

Citation Formats

Chen, X. Y., Gu, Y., Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn, Xi, S. P., Du, B., Ma, Y. J., Ji, W. Y., and Shi, Y. H.. Characteristics of InGaAsBi with various lattice mismatches on InP substrate. United States: N. p., 2016. Web. doi:10.1063/1.4959896.
Chen, X. Y., Gu, Y., Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn, Xi, S. P., Du, B., Ma, Y. J., Ji, W. Y., & Shi, Y. H.. Characteristics of InGaAsBi with various lattice mismatches on InP substrate. United States. doi:10.1063/1.4959896.
Chen, X. Y., Gu, Y., Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn, Xi, S. P., Du, B., Ma, Y. J., Ji, W. Y., and Shi, Y. H.. Fri . "Characteristics of InGaAsBi with various lattice mismatches on InP substrate". United States. doi:10.1063/1.4959896.
@article{osti_22611449,
title = {Characteristics of InGaAsBi with various lattice mismatches on InP substrate},
author = {Chen, X. Y. and Gu, Y. and Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn and Xi, S. P. and Du, B. and Ma, Y. J. and Ji, W. Y. and Shi, Y. H.},
abstractNote = {To develop bismuth-containing infrared optoelectronic devices, InGaAsBi/InP films with different lattice mismatches have been investigated. The lattice mismatch was tailored by changing the Bi content in conjunction with the In content simultaneously. X-ray diffraction analysis revealed that alloy lattice constants have been extended positively by incorporation of Bi into the crystal lattice. Electrical and optical characteristics were investigated by Hall-effect, optical absorption and photoluminescence measurements. A bandgap shrinking of about 56.4 meV/Bi% was deduced by X-ray diffraction and optical absorption measurements. From the excitation dependent photoluminescence measurement at 10 K, the donor-acceptor pair emissions were inferred for samples containing moderate and high levels of Bi. The temperature dependence of the PL peak energy is as small as 0.06 meV/K in In{sub 0.5}Ga{sub 0.5}As{sub 0.987}Bi{sub 0.013}, which is fairly low compared with that of In{sub 0.5}Ga{sub 0.5}As.},
doi = {10.1063/1.4959896},
journal = {AIP Advances},
number = 7,
volume = 6,
place = {United States},
year = {Fri Jul 15 00:00:00 EDT 2016},
month = {Fri Jul 15 00:00:00 EDT 2016}
}