Controlling dynamical thermal transport of biased bilayer graphene by impurity atoms

Journal Article · Fri Jul 15 00:00:00 EDT 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4960378· OSTI ID:22611427

Rezania, Hamed ^[1]; Yarmohammadi, Mohsen ^[2]

---

1. Department of Physics, Razi University, Kermanshah (Iran, Islamic Republic of)
2. Young Researchers and Elit Club, Kermanshah Branch, Islamic Azad University, Kermanshah (Iran, Islamic Republic of)

We address the dynamical thermal conductivity of biased bilayer graphene doped with acceptor impurity atoms for AA-stacking in the context of tight binding model Hamiltonian. The effect of scattering by dilute charged impurities is discussed in terms of the self-consistent Born approximation. Green’s function approach has been exploited to find the behavior of thermal conductivity of bilayer graphene within the linear response theory. We have found the frequency dependence of thermal conductivity for different values of concentration and scattering strength of dopant impurity. Also the dependence of thermal conductivity on the impurity concentration and bias voltage has been investigated in details.

• OSTI ID: 22611427
• Journal Information: AIP Advances, Vol. 6, Issue 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION SPECTROSCOPY
ATOMS
BORN APPROXIMATION
CONCENTRATION RATIO
DOPED MATERIALS
ELECTRIC POTENTIAL
FREQUENCY DEPENDENCE
GRAPHENE
HAMILTONIANS
IMPURITIES
LAYERS
SCATTERING
THERMAL CONDUCTIVITY