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Title: Effect of post annealing on spin accumulation and transport signals in Co{sub 2}FeSi/MgO/n{sup +}-Si on insulator devices

Abstract

The post annealing temperature dependence of spin accumulation and transport signals in Co{sub 2}FeSi/MgO/n{sup +}-Si on insulator were investigated. The spin signals were detected using 3- and 4-terminal Hanle, 2-terminal local and 4-terminal nonlocal magnetoresistance measurements. The post annealing temperature (T{sub A}) dependence of the magnitude in 3-terminal narrow Hanle signals is nearly constant up to T{sub A} < 400°C, however a slight decrease above T{sub A} ≥ 400°C is observed. This behavior is consistent with the T{sub A} dependence of the magnitude of 4-terminal nonlocal magnetoresistance (MR) signals. The spin polarization estimated from the 3-terminal narrow Hanle signals and the magnitude of 2-terminal local MR signals show a slight improvement with increasing post annealing temperature with a peak at around 325°C and then start reducing slowly. The slight increase in the spin signal would be due to high spin polarization of Co{sub 2}FeSi as a result of structural ordering. The 2-terminal local MR signals do not vary significantly by annealing between as-deposited and T{sub A} = 400°C, indicating the robustness of our device. This result would be useful for future Si spintronics devices.

Authors:
; ; ; ;  [1];  [2]
  1. Corporate Research & Development Center, Toshiba Corporation, 1 Komukai-Toshiba, Kawasaki, Kanagawa 212-8582 (Japan)
  2. Department of Materials Science, Tohoku University, 6-6-02 Aramaki-Aza-Aoba, 980-8579 Sendai (Japan)
Publication Date:
OSTI Identifier:
22611426
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 7; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; COBALT COMPOUNDS; EQUIPMENT; IRON COMPOUNDS; MAGNESIUM OXIDES; MAGNETORESISTANCE; N-TYPE CONDUCTORS; SIGNALS; SILICON; SILICON COMPOUNDS; SPIN; SPIN ORIENTATION; TEMPERATURE DEPENDENCE; TERNARY ALLOY SYSTEMS

Citation Formats

Tiwari, Ajay, E-mail: ajay1.tiwari@toshiba.co.jp, Inokuchi, Tomoaki, Ishikawa, Mizue, Sugiyama, Hideyuki, Saito, Yoshiaki, and Tezuka, Nobuki. Effect of post annealing on spin accumulation and transport signals in Co{sub 2}FeSi/MgO/n{sup +}-Si on insulator devices. United States: N. p., 2016. Web. doi:10.1063/1.4960210.
Tiwari, Ajay, E-mail: ajay1.tiwari@toshiba.co.jp, Inokuchi, Tomoaki, Ishikawa, Mizue, Sugiyama, Hideyuki, Saito, Yoshiaki, & Tezuka, Nobuki. Effect of post annealing on spin accumulation and transport signals in Co{sub 2}FeSi/MgO/n{sup +}-Si on insulator devices. United States. doi:10.1063/1.4960210.
Tiwari, Ajay, E-mail: ajay1.tiwari@toshiba.co.jp, Inokuchi, Tomoaki, Ishikawa, Mizue, Sugiyama, Hideyuki, Saito, Yoshiaki, and Tezuka, Nobuki. Fri . "Effect of post annealing on spin accumulation and transport signals in Co{sub 2}FeSi/MgO/n{sup +}-Si on insulator devices". United States. doi:10.1063/1.4960210.
@article{osti_22611426,
title = {Effect of post annealing on spin accumulation and transport signals in Co{sub 2}FeSi/MgO/n{sup +}-Si on insulator devices},
author = {Tiwari, Ajay, E-mail: ajay1.tiwari@toshiba.co.jp and Inokuchi, Tomoaki and Ishikawa, Mizue and Sugiyama, Hideyuki and Saito, Yoshiaki and Tezuka, Nobuki},
abstractNote = {The post annealing temperature dependence of spin accumulation and transport signals in Co{sub 2}FeSi/MgO/n{sup +}-Si on insulator were investigated. The spin signals were detected using 3- and 4-terminal Hanle, 2-terminal local and 4-terminal nonlocal magnetoresistance measurements. The post annealing temperature (T{sub A}) dependence of the magnitude in 3-terminal narrow Hanle signals is nearly constant up to T{sub A} < 400°C, however a slight decrease above T{sub A} ≥ 400°C is observed. This behavior is consistent with the T{sub A} dependence of the magnitude of 4-terminal nonlocal magnetoresistance (MR) signals. The spin polarization estimated from the 3-terminal narrow Hanle signals and the magnitude of 2-terminal local MR signals show a slight improvement with increasing post annealing temperature with a peak at around 325°C and then start reducing slowly. The slight increase in the spin signal would be due to high spin polarization of Co{sub 2}FeSi as a result of structural ordering. The 2-terminal local MR signals do not vary significantly by annealing between as-deposited and T{sub A} = 400°C, indicating the robustness of our device. This result would be useful for future Si spintronics devices.},
doi = {10.1063/1.4960210},
journal = {AIP Advances},
number = 7,
volume = 6,
place = {United States},
year = {Fri Jul 15 00:00:00 EDT 2016},
month = {Fri Jul 15 00:00:00 EDT 2016}
}