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Title: Using quantum dot photoluminescence for load detection

Abstract

We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl)-3,3′-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.

Authors:
;  [1];  [2]; ; ;  [1];  [3]
  1. Technische Universität Chemnitz, Reichenhainer Straße, 09126 Chemnitz (Germany)
  2. Fraunhofer Institute for Electronic Nano Systems, Technologie-Campus 3, 09126 Chemnitz (Germany)
  3. (Germany)
Publication Date:
OSTI Identifier:
22611409
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM SELENIDES; CADMIUM SULFIDES; CHARGE CARRIERS; DETECTION; ELECTRIC POTENTIAL; ILLUMINANCE; INJECTION; LAYERS; ORGANIC SEMICONDUCTORS; PHOTOLUMINESCENCE; QUANTUM DOTS; QUENCHING; SEMICONDUCTOR MATERIALS; SENSORS; SPECTRA; STORAGE; TIME RESOLUTION

Citation Formats

Moebius, M., E-mail: martin.moebius@zfm.tu-chemnitz.de, Hartwig, M., Martin, J., Baumann, R. R., Otto, T., Gessner, T., and Fraunhofer Institute for Electronic Nano Systems, Technologie-Campus 3, 09126 Chemnitz. Using quantum dot photoluminescence for load detection. United States: N. p., 2016. Web. doi:10.1063/1.4961145.
Moebius, M., E-mail: martin.moebius@zfm.tu-chemnitz.de, Hartwig, M., Martin, J., Baumann, R. R., Otto, T., Gessner, T., & Fraunhofer Institute for Electronic Nano Systems, Technologie-Campus 3, 09126 Chemnitz. Using quantum dot photoluminescence for load detection. United States. doi:10.1063/1.4961145.
Moebius, M., E-mail: martin.moebius@zfm.tu-chemnitz.de, Hartwig, M., Martin, J., Baumann, R. R., Otto, T., Gessner, T., and Fraunhofer Institute for Electronic Nano Systems, Technologie-Campus 3, 09126 Chemnitz. 2016. "Using quantum dot photoluminescence for load detection". United States. doi:10.1063/1.4961145.
@article{osti_22611409,
title = {Using quantum dot photoluminescence for load detection},
author = {Moebius, M., E-mail: martin.moebius@zfm.tu-chemnitz.de and Hartwig, M. and Martin, J. and Baumann, R. R. and Otto, T. and Gessner, T. and Fraunhofer Institute for Electronic Nano Systems, Technologie-Campus 3, 09126 Chemnitz},
abstractNote = {We propose a novel concept for an integrable and flexible sensor capable to visualize mechanical impacts on lightweight structures by quenching the photoluminescence (PL) of CdSe quantum dots. Considering the requirements such as visibility, storage time and high optical contrast of PL quenching with low power consumption, we have investigated a symmetrical and an asymmetrical layer stack consisting of semiconductor organic N,N,N′,N′-Tetrakis(3-methylphenyl)-3,3′-dimethylbenzidine (HMTPD) and CdSe quantum dots with elongated CdS shell. Time-resolved series of PL spectra from layer stacks with applied voltages of different polarity and simultaneous observation of power consumption have shown that a variety of mechanisms such as photo-induced charge separation and charge injection, cause PL quenching. However, mechanisms such as screening of external field as well as Auger-assisted charge ejection is working contrary to that. Investigations regarding the influence of illumination revealed that the positive biased asymmetrical layer stack is the preferred sensor configuration, due to a charge carrier injection at voltages of 10 V without the need of coincident illumination.},
doi = {10.1063/1.4961145},
journal = {AIP Advances},
number = 8,
volume = 6,
place = {United States},
year = 2016,
month = 8
}
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