skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Suppression effect of silicon (Si) on Er{sup 3+} 1.54μm excitation in ZnO thin films

Abstract

We have investigated the photoluminescence (PL) characteristics of ZnO:Er thin films on Si (100) single crystal and SiO{sub 2}-on-silicon (SiO{sub 2}) substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS), X-ray diffraction (XRD) and atomic force microscope (AFM) were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS). Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT), PL (1.54μm) intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si) appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er{sup 3+} 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er{sup 3+} was very low when compared with silicon nanocrystal (Si-NC). Both made the PL (1.54μm) intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.

Authors:
; ;  [1];  [2]
  1. School of Information Science and Engineering, Shandong University, Jinan, Shandong 250100 (China)
  2. Department of Radiation Oncology, Qilu Hospital, Shandong University, Jinan, Shandong 250100 (China)
Publication Date:
OSTI Identifier:
22611403
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ATOMIC FORCE MICROSCOPY; DIFFUSION; DOPED MATERIALS; ERBIUM IONS; EXCITATION; INFRARED SPECTRA; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MONOCRYSTALS; NANOSTRUCTURES; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SILICON OXIDES; SPECTROMETERS; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES

Citation Formats

Xu, Bo, Lu, Fei, E-mail: lufei@sdu.edu.cn, Fan, Ranran, and Ma, Changdong. Suppression effect of silicon (Si) on Er{sup 3+} 1.54μm excitation in ZnO thin films. United States: N. p., 2016. Web. doi:10.1063/1.4961026.
Xu, Bo, Lu, Fei, E-mail: lufei@sdu.edu.cn, Fan, Ranran, & Ma, Changdong. Suppression effect of silicon (Si) on Er{sup 3+} 1.54μm excitation in ZnO thin films. United States. doi:10.1063/1.4961026.
Xu, Bo, Lu, Fei, E-mail: lufei@sdu.edu.cn, Fan, Ranran, and Ma, Changdong. Mon . "Suppression effect of silicon (Si) on Er{sup 3+} 1.54μm excitation in ZnO thin films". United States. doi:10.1063/1.4961026.
@article{osti_22611403,
title = {Suppression effect of silicon (Si) on Er{sup 3+} 1.54μm excitation in ZnO thin films},
author = {Xu, Bo and Lu, Fei, E-mail: lufei@sdu.edu.cn and Fan, Ranran and Ma, Changdong},
abstractNote = {We have investigated the photoluminescence (PL) characteristics of ZnO:Er thin films on Si (100) single crystal and SiO{sub 2}-on-silicon (SiO{sub 2}) substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS), X-ray diffraction (XRD) and atomic force microscope (AFM) were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS). Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT), PL (1.54μm) intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si) appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er{sup 3+} 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er{sup 3+} was very low when compared with silicon nanocrystal (Si-NC). Both made the PL (1.54μm) intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.},
doi = {10.1063/1.4961026},
journal = {AIP Advances},
number = 8,
volume = 6,
place = {United States},
year = {Mon Aug 15 00:00:00 EDT 2016},
month = {Mon Aug 15 00:00:00 EDT 2016}
}