Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors
- Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia)
High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN film in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.
- OSTI ID:
- 22611389
- Journal Information:
- AIP Advances, Vol. 6, Issue 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL STRUCTURE
FILMS
GALLIUM NITRIDES
IMPURITIES
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PHOTODETECTORS
RAMAN EFFECT
RESOLUTION
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SURFACES
TIME DEPENDENCE
ULTRAVIOLET RADIATION
WAVELENGTHS
X-RAY DIFFRACTOMETERS
DARK CURRENT