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Title: Effect of thermal annealing on electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk

Abstract

The effect of thermal annealing on the electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.

Authors:
; ; ; ; ;  [1]; ;  [2]
  1. Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555 (Japan)
  2. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Dushu Lake Higher Education Town, Ruoshui Road 398, Suzhou Industrial Park, Suzhou (China)
Publication Date:
OSTI Identifier:
22611372
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 6; Journal Issue: 8; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ARSENIC COMPOUNDS; BERYLLIUM ADDITIONS; CARRIER LIFETIME; CRYSTAL GROWTH; CRYSTALS; DOPED MATERIALS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOSPHORUS COMPOUNDS; REFLECTION; RELAXATION TIME; SPIN; TEMPERATURE RANGE 0273-0400 K; TIME RESOLUTION

Citation Formats

Wu, Hao, Harasawa, Ryo, Yasue, Yuya, Aritake, Takanori, Jiang, Canyu, Tackeuchi, Atsushi, E-mail: atacke@waseda.jp, Ji, Lian, and Lu, Shulong. Effect of thermal annealing on electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk. United States: N. p., 2016. Web. doi:10.1063/1.4961948.
Wu, Hao, Harasawa, Ryo, Yasue, Yuya, Aritake, Takanori, Jiang, Canyu, Tackeuchi, Atsushi, E-mail: atacke@waseda.jp, Ji, Lian, & Lu, Shulong. Effect of thermal annealing on electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk. United States. doi:10.1063/1.4961948.
Wu, Hao, Harasawa, Ryo, Yasue, Yuya, Aritake, Takanori, Jiang, Canyu, Tackeuchi, Atsushi, E-mail: atacke@waseda.jp, Ji, Lian, and Lu, Shulong. 2016. "Effect of thermal annealing on electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk". United States. doi:10.1063/1.4961948.
@article{osti_22611372,
title = {Effect of thermal annealing on electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk},
author = {Wu, Hao and Harasawa, Ryo and Yasue, Yuya and Aritake, Takanori and Jiang, Canyu and Tackeuchi, Atsushi, E-mail: atacke@waseda.jp and Ji, Lian and Lu, Shulong},
abstractNote = {The effect of thermal annealing on the electron spin relaxation of beryllium-doped In{sub 0.8}Ga{sub 0.2}As{sub 0.45}P{sub 0.55} bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.},
doi = {10.1063/1.4961948},
journal = {AIP Advances},
number = 8,
volume = 6,
place = {United States},
year = 2016,
month = 8
}
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